The IR2153 is an enhanced version of the widely-used IR2155 and IR2151 gate driver ICs, integrating a high-voltage half-bridge gate driver and a front-end oscillator, similar to the CMOS 555 timer. This improved design offers greater functionality and ease of use compared to its predecessors.
THGBMJG6C1LBAIL Introduction THGBMFG6C1LBAIL is an 8GB density e-MMC (embedded MultiMediaCard) module, housed in a compact 153-ball BGA (Ball Grid Array) package.
The LM723 is a monolithic integrated programmable voltage regulator, available in a 14-lead dual in-line plastic package and an SO-14 micro package.
The IR2104S is a high-voltage, high-speed driver to control power MOSFETs and IGBTs. It features both high-side and low-side output channels, which are interdependent, making it ideal for driving N-channel power MOSFETs or IGBTs in a variety of high-side configurations.
IRF540 MOSFET: Test Circuit, Pinout and Features
The SN65HVD230D is a CAN transceiver that adheres to the ISO 11898-2 High-Speed CAN Physical Layer standard.
The TIP3055 is a popular NPN power transistor. It is commonly used in power amplifiers, switching regulators, and motor control circuits due to its ability to handle high voltages and currents, with a maximum collector current of 15A and a collector-emitter voltage of 60V.
The IR2110 is a high-voltage, high-speed driver for controlling power MOSFETs and IGBTs, featuring independent high and low side output channels.
Detailed Explanation of Electric Vehicle Electronic Control Systems
The MMBT4401 is an NPN bipolar junction transistor (BJT) commonly used in switching and amplification applications. It is housed in a small SOT-23 surface-mount package.
The TDA2822M is a dual low-power audio amplifier integrated circuit (IC) commonly used in portable audio devices and low-power amplifier applications. It can operate with a low voltage supply, typically between 3V and 15V. The TDA2822M can drive both stereo (dual-channel) and bridge-tied load (BTL) configurations, allowing it to deliver output power up to 1W per channel in BTL mode.
The TIP147 is a PNP Darlington transistor, it is manufactured using advanced planar technology with a "base island" layout and a monolithic Darlington configuration.
The IRF840, featuring the advanced PowerMESH™ II technology, represents a significant evolution in MOSFET design, building upon the foundations of the first-generation MESH OVERLAY™. This enhancement in layout and structure greatly improves the Ron*area figure of merit, getting lower on-resistance for more efficient power conversion.
The TDA7377 is a high-performance audio amplifier IC for automotive and other high-power audio applications. It operates as a bridge amplifier, capable of driving speakers with a total output power of up to 14 watts per channel.
The AD620AN is a low-cost, high-accuracy instrumentation amplifier that provides gains from 1 to 10,000 with a single external resistor. It features a compact 8-lead package, low power consumption (1.3 mA max), and is ideal for battery-powered and portable applications. The AD620AN is a low-cost, high-accuracy instrumentation amplifier that provides gains from 1 to 10,000 with a single external resistor. It features a compact 8-lead package, low power consumption (1.3 mA max), and is ideal for battery-powered and portable applications.
The DB3 functions as a trigger diode with a fixed voltage reference, ideal for use in conjunction with TRIACs in simplified gate control circuits or as a starting component in fluorescent lamp ballasts. Housed in a compact SOT23-3L surface mount package, these devices are well-suited for SMD-based designs, facilitating automated manufacturing processes.
The DS1307 is a low-power serial real-time clock (RTC) with full binary-coded decimal (BCD) format for clock and calendar functions, and it includes 56 bytes of non-volatile SRAM. Data and addresses are transferred serially via an I2C bidirectional bus.
The BCP56 is a high-voltage, high-speed NPN bipolar junction transistor (BJT) for use in switching and amplification applications. It features a maximum collector-emitter voltage of 80V and a maximum collector current of 2A, making it suitable for a range of electronic circuits.
