Page 13 - Produits Toshiba Semiconductor and Storage

Référence	Fabricant	Description	paquet	Stock
GT50J121(Q)	Toshiba Semiconductor and Storage	IGBT 600V 50A 240W TO3P LH IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A Power - Max: 240W Switching Energy: 1.3mJ (on), 1.34mJ (off) Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 90ns/300ns Test Condition: 300V, 50A, 13 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PL Supplier Device Package: TO-3P(LH)	paquet: TO-3PL	Stock4 736
TJ8S06M3L(T6L1,NQ)	Toshiba Semiconductor and Storage	MOSFET P-CH 60V 8A DPAK-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 10V Vgs (Max): +10V, -20V FET Feature: - Power Dissipation (Max): 27W (Tc) Rds On (Max) @ Id, Vgs: 104 mOhm @ 4A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	paquet: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4 896
TK8Q65W,S1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 7.8A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 670 mOhm @ 3.9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Stub Leads, IPak	paquet: TO-251-3 Stub Leads, IPak	Stock11 808
TK22E10N1,S1X	Toshiba Semiconductor and Storage	MOSFET N CH 100V 52A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 72W (Tc) Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 11A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	paquet: TO-220-3	Stock10 188
TPH1110FNH,L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 250V 15A 8-SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 112 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	paquet: 8-PowerVDFN	Stock44 208
SSM6K403TU,LF	Toshiba Semiconductor and Storage	MOSFET N-CH 20V 4.2A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 28 mOhm @ 3A, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UF6 Package / Case: 6-SMD, Flat Leads	paquet: 6-SMD, Flat Leads	Stock24 714
SSM3J120TU,LF	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 4A UFM FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22.3nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 1484pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 38 mOhm @ 3A, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	paquet: 3-SMD, Flat Leads	Stock231 690
2SA1020A,NSEIKIF(J	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	paquet: TO-226-3, TO-92-3 Long Body	Stock5 472
RN1109ACT(TPL3)	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.1W CST3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	paquet: SC-101, SOT-883	Stock2 496
RN1902FE,LF(CT	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.1W ES6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 1k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	paquet: SOT-563, SOT-666	Stock35 862
CLH06(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 300V 5A L-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -	paquet: L-FLAT?	Stock6 144
TB62777FG,EL	Toshiba Semiconductor and Storage	IC LED DRIVER DISPLAY 16SSOP Type: Linear Topology: Shift Register Internal Switch(s): Yes Number of Outputs: 8 Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Voltage - Output: 25V Current - Output / Channel: 40mA Frequency: - Dimming: - Applications: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOP (0.181", 4.60mm Width) Supplier Device Package: 16-SSOP	paquet: 16-SOP (0.181", 4.60mm Width)	Stock7 280
TPS850	Toshiba Semiconductor and Storage	IC PHOTO LINEAR-OUT Type: Ambient Wavelength: 640nm Proximity Detection: No Output Type: Current Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -30°C ~ 85°C Mounting Type: Surface Mount Package / Case: 1210 (3225 Metric) (4 Leads) Supplier Device Package: -	paquet: 1210 (3225 Metric) (4 Leads)	Stock8 082
TCS11DLU(TE85L,F)	Toshiba Semiconductor and Storage	MAGNETIC SWITCH OMNIPOLAR UFV Function: Omnipolar Switch Technology: Hall Effect Polarization: Either Sensing Range: ±2.5mT Trip, ±0.3mT Release Test Condition: 25°C Voltage - Supply: 2.3 V ~ 3.6 V Current - Supply (Max): 1.3mA Current - Output (Max): 5mA Output Type: Open Drain Features: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 6-SMD (5 Leads), Flat Lead Supplier Device Package: UFV	paquet: 6-SMD (5 Leads), Flat Lead	Stock4 986
TLP3127(TP,F	Toshiba Semiconductor and Storage	PHOTORELAY SPST-NO 1.3A 60V Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): - Load Current: 1.3A Voltage - Input: 1.33VDC Voltage - Load: 0 ~ 60 V Mounting Type: Surface Mount Termination Style: Gull Wing Package / Case: 4-SOP (0.173", 4.40mm) Supplier Device Package: 4-SOP (2.54mm) Relay Type: Relay	paquet: 4-SOP (0.173", 4.40mm)	Stock4 572
TLP293-4(LA,E	Toshiba Semiconductor and Storage	OPTOISOLATOR 3.75KV TRANS SO16 Number of Channels: 4 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 500µA Current Transfer Ratio (Max): 600% @ 500µA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.179", 4.55mm Width) Supplier Device Package: 16-SO	paquet: 16-SOIC (0.179", 4.55mm Width)	Stock2 322
TBD62789APG	Toshiba Semiconductor and Storage	TRANSISTOR ARRAY INTERFACE DRIVE Switch Type: - Number of Outputs: - Ratio - Input:Output: - Output Configuration: - Output Type: - Interface: - Voltage - Load: - Voltage - Supply (Vcc/Vdd): - Current - Output (Max): - Rds On (Typ): - Input Type: - Features: - Fault Protection: - Operating Temperature: - Package / Case: 20-DIP (0.300", 7.62mm) Supplier Device Package: 20-DIP	paquet: 20-DIP (0.300", 7.62mm)	Stock18 246
TCR15AG18,LF	Toshiba Semiconductor and Storage	IC REG LINEAR 1.8V 1.5A 6WCSP Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 6V Voltage - Output (Min/Fixed): 1.8V Voltage - Output (Max): - Voltage Dropout (Max): 0.648V @ 1.5A Current - Output: 1.5A Current - Quiescent (Iq): 40µA Current - Supply (Max): - PSRR: 95dB ~ 60dB (1kHz) Control Features: Enable Protection Features: Current Limit, Thermal Shutdown, UVLO Operating Temperature: -40°C ~ 85°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFBGA, WLCSP Supplier Device Package: 6-WCSP (1.2x0.80)	paquet: 6-XFBGA, WLCSP	Stock5 376
TMPM037FWUG(KY,JZ)	Toshiba Semiconductor and Storage	TX FAMILY MCU Core Processor: ARM® Cortex®-M0 Core Size: 32-Bit Speed: 20MHz Connectivity: I²C, SIO, UART/USART Peripherals: DMA, LVD, POR, WDT Number of I/O: 51 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 2.7 V ~ 3.6 V Data Converters: A/D 8x10b Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 64-LQFP Supplier Device Package: 64-LQFP (10x10)	paquet: 64-LQFP	Stock7 632
BAV70-LM	Toshiba Semiconductor and Storage	DIODE ARRAY GP 100V 215MA SOT23 Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io) (per Diode): 215mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 200 nA @ 80 V Operating Temperature - Junction: 150°C (Max) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	paquet: -	Stock9 420
RN4904FE-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz, 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	paquet: -	Stock24 000
TK750A60F-S4X	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 10A TO220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	paquet: -	Stock2 610
TJ20S04M3L-LXHQ	Toshiba Semiconductor and Storage	MOSFET P-CH 40V 20A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V Vgs (Max): +10V, -20V FET Feature: - Power Dissipation (Max): 41W (Tc) Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	paquet: -	Stock29 727
CMS20I30A-TE12L-QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 2A M-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 30 V Capacitance @ Vr, F: 82pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: 150°C (Max)	paquet: -	Stock8 880
SSM3J375F-LXHF	Toshiba Semiconductor and Storage	AECQ MOSFET PCH -20V -2A SOT346 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V Vgs (Max): +6V, -8V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: S-Mini Package / Case: TO-236-3, SC-59, SOT-23-3	paquet: -	Stock37 518
TC9592XBG-EL	Toshiba Semiconductor and Storage	IC BRIDGE 49VFBGA Type: Bridge Applications: - Mounting Type: Surface Mount Package / Case: 49-VFBGA Supplier Device Package: 49-VFBGA (5x5)	paquet: -	Request a Quote
TCR3UM12A-LF-SE	Toshiba Semiconductor and Storage	LDO REG IOUT: 300MA VIN: 6V VOUT Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.2V Voltage - Output (Max): - Voltage Dropout (Max): 0.857V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): 580 nA Current - Supply (Max): - PSRR: - Control Features: Current Limit, Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-UDFN Exposed Pad Supplier Device Package: 4-DFN (1x1)	paquet: -	Stock27 432
1SS422-TE85L-F	Toshiba Semiconductor and Storage	DIODE ARR SCHOTT 30V 100MA SSM Diode Configuration: 1 Pair Series Connection Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io) (per Diode): 100mA Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 30 V Operating Temperature - Junction: 125°C (Max) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	paquet: -	Stock205 713

GT50J121(Q)

Toshiba Semiconductor and Storage

IGBT 600V 50A 240W TO3P LH

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 50A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
Power - Max: 240W
Switching Energy: 1.3mJ (on), 1.34mJ (off)
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 90ns/300ns
Test Condition: 300V, 50A, 13 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PL
Supplier Device Package: TO-3P(LH)

paquet: TO-3PL

Stock4 736

TJ8S06M3L(T6L1,NQ)

Toshiba Semiconductor and Storage

MOSFET P-CH 60V 8A DPAK-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 10V
Vgs (Max): +10V, -20V
FET Feature: -
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 104 mOhm @ 4A, 10V
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK+
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4 896

TK8Q65W,S1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 7.8A IPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 300V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 670 mOhm @ 3.9A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-Pak
Package / Case: TO-251-3 Stub Leads, IPak

paquet: TO-251-3 Stub Leads, IPak

Stock11 808

TK22E10N1,S1X

Toshiba Semiconductor and Storage

MOSFET N CH 100V 52A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 72W (Tc)
Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 11A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

paquet: TO-220-3

Stock10 188

TPH1110FNH,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 250V 15A 8-SOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 112 mOhm @ 5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

paquet: 8-PowerVDFN

Stock44 208

SSM6K403TU,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 4.2A

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 10V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 28 mOhm @ 3A, 4V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: UF6
Package / Case: 6-SMD, Flat Leads

paquet: 6-SMD, Flat Leads

Stock24 714

SSM3J120TU,LF

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 4A UFM

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22.3nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 1484pF @ 10V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 38 mOhm @ 3A, 4V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: UFM
Package / Case: 3-SMD, Flat Leads

paquet: 3-SMD, Flat Leads

Stock231 690

2SA1020A,NSEIKIF(J

Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

paquet: TO-226-3, TO-92-3 Long Body

Stock5 472

RN1109ACT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W CST3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3

paquet: SC-101, SOT-883

Stock2 496

RN1902FE,LF(CT

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 1k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

paquet: SOT-563, SOT-666

Stock35 862

CLH06(TE16R,Q)

Toshiba Semiconductor and Storage

DIODE GEN PURP 300V 5A L-FLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 5A (DC)
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: L-FLAT?
Supplier Device Package: L-FLAT? (4x5.5)
Operating Temperature - Junction: -

paquet: L-FLAT?

Stock6 144

TB62777FG,EL

Toshiba Semiconductor and Storage

IC LED DRIVER DISPLAY 16SSOP

Type: Linear
Topology: Shift Register
Internal Switch(s): Yes
Number of Outputs: 8
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Voltage - Output: 25V
Current - Output / Channel: 40mA
Frequency: -
Dimming: -
Applications: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOP (0.181", 4.60mm Width)
Supplier Device Package: 16-SSOP

paquet: 16-SOP (0.181", 4.60mm Width)

Stock7 280

TPS850

Toshiba Semiconductor and Storage

IC PHOTO LINEAR-OUT

Type: Ambient
Wavelength: 640nm
Proximity Detection: No
Output Type: Current
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -30°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 1210 (3225 Metric) (4 Leads)
Supplier Device Package: -

paquet: 1210 (3225 Metric) (4 Leads)

Stock8 082

TCS11DLU(TE85L,F)

Toshiba Semiconductor and Storage

MAGNETIC SWITCH OMNIPOLAR UFV

Function: Omnipolar Switch
Technology: Hall Effect
Polarization: Either
Sensing Range: ±2.5mT Trip, ±0.3mT Release
Test Condition: 25°C
Voltage - Supply: 2.3 V ~ 3.6 V
Current - Supply (Max): 1.3mA
Current - Output (Max): 5mA
Output Type: Open Drain
Features: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 6-SMD (5 Leads), Flat Lead
Supplier Device Package: UFV

paquet: 6-SMD (5 Leads), Flat Lead

Stock4 986

TLP3127(TP,F

Toshiba Semiconductor and Storage

PHOTORELAY SPST-NO 1.3A 60V

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): -
Load Current: 1.3A
Voltage - Input: 1.33VDC
Voltage - Load: 0 ~ 60 V
Mounting Type: Surface Mount
Termination Style: Gull Wing
Package / Case: 4-SOP (0.173", 4.40mm)
Supplier Device Package: 4-SOP (2.54mm)
Relay Type: Relay

paquet: 4-SOP (0.173", 4.40mm)

Stock4 572

TLP293-4(LA,E

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

Number of Channels: 4
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 500µA
Current Transfer Ratio (Max): 600% @ 500µA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Supplier Device Package: 16-SO

paquet: 16-SOIC (0.179", 4.55mm Width)

Stock2 322

TBD62789APG

Toshiba Semiconductor and Storage

TRANSISTOR ARRAY INTERFACE DRIVE

Switch Type: -
Number of Outputs: -
Ratio - Input:Output: -
Output Configuration: -
Output Type: -
Interface: -
Voltage - Load: -
Voltage - Supply (Vcc/Vdd): -
Current - Output (Max): -
Rds On (Typ): -
Input Type: -
Features: -
Fault Protection: -
Operating Temperature: -
Package / Case: 20-DIP (0.300", 7.62mm)
Supplier Device Package: 20-DIP

paquet: 20-DIP (0.300", 7.62mm)

Stock18 246

TCR15AG18,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 1.8V 1.5A 6WCSP

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 6V
Voltage - Output (Min/Fixed): 1.8V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.648V @ 1.5A
Current - Output: 1.5A
Current - Quiescent (Iq): 40µA
Current - Supply (Max): -
PSRR: 95dB ~ 60dB (1kHz)
Control Features: Enable
Protection Features: Current Limit, Thermal Shutdown, UVLO
Operating Temperature: -40°C ~ 85°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Supplier Device Package: 6-WCSP (1.2x0.80)

paquet: 6-XFBGA, WLCSP

Stock5 376

TMPM037FWUG(KY,JZ)

Toshiba Semiconductor and Storage

TX FAMILY MCU

Core Processor: ARM® Cortex®-M0
Core Size: 32-Bit
Speed: 20MHz
Connectivity: I²C, SIO, UART/USART
Peripherals: DMA, LVD, POR, WDT
Number of I/O: 51
Program Memory Size: 128KB (128K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 2.7 V ~ 3.6 V
Data Converters: A/D 8x10b
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 64-LQFP
Supplier Device Package: 64-LQFP (10x10)

paquet: 64-LQFP

Stock7 632

BAV70-LM

Toshiba Semiconductor and Storage

DIODE ARRAY GP 100V 215MA SOT23

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io) (per Diode): 215mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
Operating Temperature - Junction: 150°C (Max)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

paquet: -

Stock9 420

RN4904FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz, 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

paquet: -

Stock24 000

TK750A60F-S4X

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 10A TO220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

paquet: -

Stock2 610

TJ20S04M3L-LXHQ

Toshiba Semiconductor and Storage

MOSFET P-CH 40V 20A DPAK

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
Vgs (Max): +10V, -20V
FET Feature: -
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: DPAK+
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

paquet: -

Stock29 727

CMS20I30A-TE12L-QM

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 2A M-FLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Capacitance @ Vr, F: 82pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: 150°C (Max)

paquet: -

Stock8 880

SSM3J375F-LXHF

Toshiba Semiconductor and Storage

AECQ MOSFET PCH -20V -2A SOT346

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Vgs (Max): +6V, -8V
FET Feature: -
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: S-Mini
Package / Case: TO-236-3, SC-59, SOT-23-3

paquet: -

Stock37 518

TC9592XBG-EL

Toshiba Semiconductor and Storage

IC BRIDGE 49VFBGA

Type: Bridge
Applications: -
Mounting Type: Surface Mount
Package / Case: 49-VFBGA
Supplier Device Package: 49-VFBGA (5x5)

paquet: -

Request a Quote

TCR3UM12A-LF-SE

Toshiba Semiconductor and Storage

LDO REG IOUT: 300MA VIN: 6V VOUT

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.2V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.857V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): 580 nA
Current - Supply (Max): -
PSRR: -
Control Features: Current Limit, Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-UDFN Exposed Pad
Supplier Device Package: 4-DFN (1x1)

paquet: -

Stock27 432

1SS422-TE85L-F

Toshiba Semiconductor and Storage

DIODE ARR SCHOTT 30V 100MA SSM

Diode Configuration: 1 Pair Series Connection
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io) (per Diode): 100mA
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Operating Temperature - Junction: 125°C (Max)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

paquet: -

Stock205 713