Page 11 - Produits Toshiba Semiconductor and Storage

Référence	Fabricant	Description	paquet	Stock
TK80S04K3L(T6L1,NQ	Toshiba Semiconductor and Storage	MOSFET N-CH 40V 80A DPAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 40A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	paquet: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2 896
2SA1931,NSEIKIQ(J	Toshiba Semiconductor and Storage	TRANS PNP 5A 50V TO220-3 Transistor Type: PNP Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Power - Max: 2W Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	paquet: TO-220-3 Full Pack	Stock4 368
2SA1930,ONKQ(J	Toshiba Semiconductor and Storage	TRANS PNP 2A 180V TO220-3 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	paquet: TO-220-3 Full Pack	Stock7 632
2SA1680,T6F(J	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	paquet: TO-226-3, TO-92-3 Long Body	Stock6 944
2SC2705-Y(TE6,F,M)	Toshiba Semiconductor and Storage	TRANS NPN 150V 0.05A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	paquet: TO-226-3, TO-92-3 Long Body	Stock2 944
RN1968FE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.1W ES6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	paquet: SOT-563, SOT-666	Stock3 712
RN4987,LF(CT	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.2W US6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	paquet: 6-TSSOP, SC-88, SOT-363	Stock27 048
TBAV70,LM	Toshiba Semiconductor and Storage	DIODE HS SW 80V 215MA SOT23 Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 215mA Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Operating Temperature - Junction: - Mounting Type: Surface Mount Package / Case: SOT-23-3 Flat Leads Supplier Device Package: SOT-23-3	paquet: SOT-23-3 Flat Leads	Stock51 252
TCR2EE115,LM(CT	Toshiba Semiconductor and Storage	IC REG LINEAR 1.15V 200MA ESV Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.15V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): 60µA PSRR: 73dB (1kHz) Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	paquet: SOT-553	Stock5 008
TCR2LN32,LF	Toshiba Semiconductor and Storage	IC REG LINEAR 3.2V 200MA 4-SDFN Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3.2V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): 2µA PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	paquet: 4-XFDFN Exposed Pad	Stock78 270
74HC4049D(BJ)	Toshiba Semiconductor and Storage	IC INVERTER 6CH 16SOIC Logic Type: Inverter Number of Circuits: 6 Number of Inputs: 6 Features: - Voltage - Supply: 2 V ~ 6 V Current - Quiescent (Max): 1µA Current - Output High, Low: 7.8mA, 7.8mA Logic Level - Low: 0.5 V ~ 1.8 V Logic Level - High: 1.5 V ~ 4.2 V Max Propagation Delay @ V, Max CL: 25ns @ 6V, 150pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 16-SOIC Package / Case: 16-SOIC (0.154", 3.90mm Width)	paquet: 16-SOIC (0.154", 3.90mm Width)	Stock24 768
74VHCT125AFT	Toshiba Semiconductor and Storage	IC BUS BUFF TRI-ST QUAD 14TSSOP Logic Type: Buffer, Non-Inverting Number of Elements: 4 Number of Bits per Element: 1 Input Type: - Output Type: Push-Pull Current - Output High, Low: 8mA, 8mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 14-TSSOP	paquet: 14-TSSOP (0.173", 4.40mm Width)	Stock6 448
TC7SH34FU,LJ(CT	Toshiba Semiconductor and Storage	IC BUFF NON-INVERT 5.5V 5-SSOP Logic Type: Buffer, Non-Inverting Number of Elements: 1 Number of Bits per Element: 1 Input Type: - Output Type: Push-Pull Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	paquet: 5-TSSOP, SC-70-5, SOT-353	Stock28 794
74VHCT126AFT	Toshiba Semiconductor and Storage	IC BUS BUFF TRI-ST QUAD 14TSSOP Logic Type: Buffer, Non-Inverting Number of Elements: 4 Number of Bits per Element: 1 Input Type: - Output Type: Push-Pull Current - Output High, Low: 8mA, 8mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 14-TSSOP	paquet: 14-TSSOP (0.173", 4.40mm Width)	Stock401 196
TMP86PM29BUG(C,JZ)	Toshiba Semiconductor and Storage	IC MCU 8BIT 32KB OTP 64LQFP Core Processor: - Core Size: 8-Bit Speed: 16MHz Connectivity: SIO, UART/USART Peripherals: LCD, PWM, WDT Number of I/O: 39 Program Memory Size: 32KB (32K x 8) Program Memory Type: OTP EEPROM Size: - RAM Size: 1.5K x 8 Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V Data Converters: A/D 8x10b Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 64-LQFP Supplier Device Package: 64-LQFP (10x10)	paquet: 64-LQFP	Stock8 820
TLEGF1100C(T11(O	Toshiba Semiconductor and Storage	LED GREEN 2SMD Color: Green Configuration: - Lens Color: - Lens Transparency: - Millicandela Rating: 700mcd Lens Style/Size: Oval with Flat Top Voltage - Forward (Vf) (Typ): 3.2V Current - Test: 20mA Viewing Angle: - Mounting Type: Surface Mount Wavelength - Dominant: 528nm Wavelength - Peak: 518nm Features: - Package / Case: 2-SMD, J-Lead Supplier Device Package: SMD Size / Dimension: 3.20mm L x 2.90mm W Height (Max): 2.10mm	paquet: 2-SMD, J-Lead	Stock4 644
TLP620-2(F)	Toshiba Semiconductor and Storage	OPTOISOLATOR 5KV 2CH TRANS 8-DIP Number of Channels: 2 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 55V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 400mV Operating Temperature: -55°C ~ 100°C Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	paquet: 8-DIP (0.300", 7.62mm)	Stock8 604
TLP182(GR-TPL,E	Toshiba Semiconductor and Storage	OPTOISO 3.75KV TRANS 6-SO 4 LEAD Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 300% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Package / Case: 6-SMD (4 Leads), Gull Wing Supplier Device Package: 6-SO, 4 Lead	paquet: 6-SMD (4 Leads), Gull Wing	Stock8 820
TLP182(GB-TPL,E	Toshiba Semiconductor and Storage	OPTOISO 3.75KV TRANS 6-SO 4 LEAD Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Package / Case: 6-SMD (4 Leads), Gull Wing Supplier Device Package: 6-SO, 4 Lead	paquet: 6-SMD (4 Leads), Gull Wing	Stock8 838
TB67Z800FTG,EL	Toshiba Semiconductor and Storage	INVERTER/3 HALF BRIDGE MOSFETS W Output Configuration: - Applications: - Interface: - Load Type: - Technology: - Rds On (Typ): - Current - Output / Channel: - Current - Peak Output: - Voltage - Supply: - Voltage - Load: - Operating Temperature: - Features: - Fault Protection: - Mounting Type: Surface Mount Package / Case: 36-VFQFN Exposed Pad Supplier Device Package: 36-VQFN (5x5)	paquet: 36-VFQFN Exposed Pad	Stock15 840
TB67S521FTAG,EL	Toshiba Semiconductor and Storage	STEPPING MOTOR DRIVER IC 40V/2.8 Motor Type - Stepper: - Motor Type - AC, DC: - Function: - Output Configuration: - Interface: - Technology: - Step Resolution: - Applications: - Current - Output: - Voltage - Supply: - Voltage - Load: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 36-WFQFN Exposed Pad Supplier Device Package: 36-WQFN (6x6)	paquet: 36-WFQFN Exposed Pad	Stock33 738
TB67S512FTAG,EL	Toshiba Semiconductor and Storage	STEPPING MOTOR DRIVER IC 40V/2.0 Motor Type - Stepper: - Motor Type - AC, DC: - Function: - Output Configuration: - Interface: - Technology: - Step Resolution: - Applications: - Current - Output: - Voltage - Supply: - Voltage - Load: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 36-WFQFN Exposed Pad Supplier Device Package: 36-WQFN (6x6)	paquet: 36-WFQFN Exposed Pad	Stock28 692
TBD62786AFNG,EL	Toshiba Semiconductor and Storage	TRANSISTOR ARRAY INTERFACE DRIVE Switch Type: - Number of Outputs: - Ratio - Input:Output: - Output Configuration: - Output Type: - Interface: - Voltage - Load: - Voltage - Supply (Vcc/Vdd): - Current - Output (Max): - Rds On (Typ): - Input Type: - Features: - Fault Protection: - Operating Temperature: - Package / Case: 18-LSSOP (0.173", 4.40mm Width) Supplier Device Package: 18-SSOP	paquet: 18-LSSOP (0.173", 4.40mm Width)	Stock20 016
TB9053FTG-EL	Toshiba Semiconductor and Storage	H-BRIDGE MTR DRV 2CH 5A/1CH 10A Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: PWM, SPI Technology: DMOS Step Resolution: - Applications: - Current - Output: 6A Voltage - Supply: 4.5V ~ 28V Voltage - Load: 4.5V ~ 28V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 40-LFQFN Exposed Pad Supplier Device Package: 40-QFN (6x6)	paquet: -	Stock8 910
TPCA8128-L1Q	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 34A 8SOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 34A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V Vgs (Max): +20V, -25V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 17A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	paquet: -	Request a Quote
RN2911-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYM) PN Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	paquet: -	Request a Quote
SSM6J502NU-LF	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 6A 6UDFNB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 23.1mOhm @ 4A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFNB (2x2) Package / Case: 6-WDFN Exposed Pad	paquet: -	Stock5 625
TCR2LN30-LF-SE	Toshiba Semiconductor and Storage	LDO REG VOUT=3.0V I=200MA Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3V Voltage - Output (Max): - Voltage Dropout (Max): 0.28V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 2 µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	paquet: -	Stock59 970

TK80S04K3L(T6L1,NQ

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 80A DPAK-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 40A, 10V
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK+
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2 896

2SA1931,NSEIKIQ(J

Toshiba Semiconductor and Storage

TRANS PNP 5A 50V TO220-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Power - Max: 2W
Frequency - Transition: 60MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS

paquet: TO-220-3 Full Pack

Stock4 368

2SA1930,ONKQ(J

Toshiba Semiconductor and Storage

TRANS PNP 2A 180V TO220-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 180V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 2W
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS

paquet: TO-220-3 Full Pack

Stock7 632

2SA1680,T6F(J

Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

paquet: TO-226-3, TO-92-3 Long Body

Stock6 944

2SC2705-Y(TE6,F,M)

Toshiba Semiconductor and Storage

TRANS NPN 150V 0.05A TO-92

Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 1V @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Power - Max: 800mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: LSTM

paquet: TO-226-3, TO-92-3 Long Body

Stock2 944

RN1968FE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

paquet: SOT-563, SOT-666

Stock3 712

RN4987,LF(CT

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz, 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

paquet: 6-TSSOP, SC-88, SOT-363

Stock27 048

TBAV70,LM

Toshiba Semiconductor and Storage

DIODE HS SW 80V 215MA SOT23

Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 215mA
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Operating Temperature - Junction: -
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Supplier Device Package: SOT-23-3

paquet: SOT-23-3 Flat Leads

Stock51 252

TCR2EE115,LM(CT

Toshiba Semiconductor and Storage

IC REG LINEAR 1.15V 200MA ESV

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.15V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): 60µA
PSRR: 73dB (1kHz)
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

paquet: SOT-553

Stock5 008

TCR2LN32,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 3.2V 200MA 4-SDFN

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 3.2V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): 2µA
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

paquet: 4-XFDFN Exposed Pad

Stock78 270

74HC4049D(BJ)

Toshiba Semiconductor and Storage

IC INVERTER 6CH 16SOIC

Logic Type: Inverter
Number of Circuits: 6
Number of Inputs: 6
Features: -
Voltage - Supply: 2 V ~ 6 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 7.8mA, 7.8mA
Logic Level - Low: 0.5 V ~ 1.8 V
Logic Level - High: 1.5 V ~ 4.2 V
Max Propagation Delay @ V, Max CL: 25ns @ 6V, 150pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)

paquet: 16-SOIC (0.154", 3.90mm Width)

Stock24 768

74VHCT125AFT

Toshiba Semiconductor and Storage

IC BUS BUFF TRI-ST QUAD 14TSSOP

Logic Type: Buffer, Non-Inverting
Number of Elements: 4
Number of Bits per Element: 1
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 14-TSSOP

paquet: 14-TSSOP (0.173", 4.40mm Width)

Stock6 448

TC7SH34FU,LJ(CT

Toshiba Semiconductor and Storage

IC BUFF NON-INVERT 5.5V 5-SSOP

Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Number of Bits per Element: 1
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV

paquet: 5-TSSOP, SC-70-5, SOT-353

Stock28 794

74VHCT126AFT

Toshiba Semiconductor and Storage

IC BUS BUFF TRI-ST QUAD 14TSSOP

Logic Type: Buffer, Non-Inverting
Number of Elements: 4
Number of Bits per Element: 1
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 14-TSSOP

paquet: 14-TSSOP (0.173", 4.40mm Width)

Stock401 196

TMP86PM29BUG(C,JZ)

Toshiba Semiconductor and Storage

IC MCU 8BIT 32KB OTP 64LQFP

Core Processor: -
Core Size: 8-Bit
Speed: 16MHz
Connectivity: SIO, UART/USART
Peripherals: LCD, PWM, WDT
Number of I/O: 39
Program Memory Size: 32KB (32K x 8)
Program Memory Type: OTP
EEPROM Size: -
RAM Size: 1.5K x 8
Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
Data Converters: A/D 8x10b
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 64-LQFP
Supplier Device Package: 64-LQFP (10x10)

paquet: 64-LQFP

Stock8 820

TLEGF1100C(T11(O

Toshiba Semiconductor and Storage

LED GREEN 2SMD

Color: Green
Configuration: -
Lens Color: -
Lens Transparency: -
Millicandela Rating: 700mcd
Lens Style/Size: Oval with Flat Top
Voltage - Forward (Vf) (Typ): 3.2V
Current - Test: 20mA
Viewing Angle: -
Mounting Type: Surface Mount
Wavelength - Dominant: 528nm
Wavelength - Peak: 518nm
Features: -
Package / Case: 2-SMD, J-Lead
Supplier Device Package: SMD
Size / Dimension: 3.20mm L x 2.90mm W
Height (Max): 2.10mm

paquet: 2-SMD, J-Lead

Stock4 644

TLP620-2(F)

Toshiba Semiconductor and Storage

OPTOISOLATOR 5KV 2CH TRANS 8-DIP

Number of Channels: 2
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Current Transfer Ratio (Max): 600% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: AC, DC
Output Type: Transistor
Voltage - Output (Max): 55V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.15V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 400mV
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP

paquet: 8-DIP (0.300", 7.62mm)

Stock8 604

TLP182(GR-TPL,E

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

Number of Channels: 1
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Current Transfer Ratio (Max): 300% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: AC, DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SMD (4 Leads), Gull Wing
Supplier Device Package: 6-SO, 4 Lead

paquet: 6-SMD (4 Leads), Gull Wing

Stock8 820

TLP182(GB-TPL,E

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

Number of Channels: 1
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Current Transfer Ratio (Max): 600% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: AC, DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SMD (4 Leads), Gull Wing
Supplier Device Package: 6-SO, 4 Lead

paquet: 6-SMD (4 Leads), Gull Wing

Stock8 838

TB67Z800FTG,EL

Toshiba Semiconductor and Storage

INVERTER/3 HALF BRIDGE MOSFETS W

Output Configuration: -
Applications: -
Interface: -
Load Type: -
Technology: -
Rds On (Typ): -
Current - Output / Channel: -
Current - Peak Output: -
Voltage - Supply: -
Voltage - Load: -
Operating Temperature: -
Features: -
Fault Protection: -
Mounting Type: Surface Mount
Package / Case: 36-VFQFN Exposed Pad
Supplier Device Package: 36-VQFN (5x5)

paquet: 36-VFQFN Exposed Pad

Stock15 840

TB67S521FTAG,EL

Toshiba Semiconductor and Storage

STEPPING MOTOR DRIVER IC 40V/2.8

Motor Type - Stepper: -
Motor Type - AC, DC: -
Function: -
Output Configuration: -
Interface: -
Technology: -
Step Resolution: -
Applications: -
Current - Output: -
Voltage - Supply: -
Voltage - Load: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 36-WFQFN Exposed Pad
Supplier Device Package: 36-WQFN (6x6)

paquet: 36-WFQFN Exposed Pad

Stock33 738

TB67S512FTAG,EL

Toshiba Semiconductor and Storage

STEPPING MOTOR DRIVER IC 40V/2.0

Motor Type - Stepper: -
Motor Type - AC, DC: -
Function: -
Output Configuration: -
Interface: -
Technology: -
Step Resolution: -
Applications: -
Current - Output: -
Voltage - Supply: -
Voltage - Load: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 36-WFQFN Exposed Pad
Supplier Device Package: 36-WQFN (6x6)

paquet: 36-WFQFN Exposed Pad

Stock28 692

TBD62786AFNG,EL

Toshiba Semiconductor and Storage

TRANSISTOR ARRAY INTERFACE DRIVE

Switch Type: -
Number of Outputs: -
Ratio - Input:Output: -
Output Configuration: -
Output Type: -
Interface: -
Voltage - Load: -
Voltage - Supply (Vcc/Vdd): -
Current - Output (Max): -
Rds On (Typ): -
Input Type: -
Features: -
Fault Protection: -
Operating Temperature: -
Package / Case: 18-LSSOP (0.173", 4.40mm Width)
Supplier Device Package: 18-SSOP

paquet: 18-LSSOP (0.173", 4.40mm Width)

Stock20 016

TB9053FTG-EL

Toshiba Semiconductor and Storage

H-BRIDGE MTR DRV 2CH 5A/1CH 10A

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: PWM, SPI
Technology: DMOS
Step Resolution: -
Applications: -
Current - Output: 6A
Voltage - Supply: 4.5V ~ 28V
Voltage - Load: 4.5V ~ 28V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 40-LFQFN Exposed Pad
Supplier Device Package: 40-QFN (6x6)

paquet: -

Stock8 910

TPCA8128-L1Q

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 34A 8SOP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 34A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V
Vgs (Max): +20V, -25V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 17A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

paquet: -

Request a Quote

RN2911-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) PN

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

paquet: -

Request a Quote

SSM6J502NU-LF

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 6A 6UDFNB

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 23.1mOhm @ 4A, 4.5V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-UDFNB (2x2)
Package / Case: 6-WDFN Exposed Pad

paquet: -

Stock5 625

TCR2LN30-LF-SE

Toshiba Semiconductor and Storage

LDO REG VOUT=3.0V I=200MA

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 3V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.28V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): 2 µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

paquet: -

Stock59 970