Page 12 - Produits Renesas Electronics America - Transistors - FET, MOSFET - Simples | Heisener Electronics
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Produits Renesas Electronics America - Transistors - FET, MOSFET - Simples

Dossiers 341
Page  12/12
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot N0300N-T1B-AT
Renesas Electronics America

MOSFET N-CH 30V 4.5A SC96

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V (Typ)
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-96-3, Thin Mini Mold
  • Package / Case: SC-96
paquet: SC-96
Stock608 844
MOSFET (Metal Oxide)
30V
4.5A (Ta)
4.5V, 10V
-
7.4nC @ 10V (Typ)
350pF @ 10V
±20V
-
1.25W (Ta)
50 mOhm @ 2A, 10V
150°C
Surface Mount
SC-96-3, Thin Mini Mold
SC-96
RJK0629DPE-00#J3
Renesas Electronics America

MOSFET N-CH 60V 85A LDPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 85A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 43A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-LDPAK
  • Package / Case: SC-83
paquet: SC-83
Stock4 208
MOSFET (Metal Oxide)
60V
85A (Ta)
4.5V, 10V
-
85nC @ 10V
4100pF @ 10V
±20V
-
100W (Tc)
4.5 mOhm @ 43A, 10V
150°C (TJ)
Surface Mount
4-LDPAK
SC-83
HAT2192WP-EL-E
Renesas Electronics America

MOSFET N-CH 250V 10A WPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WPAK
  • Package / Case: 8-PowerWDFN
paquet: 8-PowerWDFN
Stock2 608
MOSFET (Metal Oxide)
250V
10A (Ta)
10V
-
15nC @ 10V
710pF @ 25V
±30V
-
25W (Tc)
230 mOhm @ 5A, 10V
150°C (TJ)
Surface Mount
8-WPAK
8-PowerWDFN
RQK0607AQDQS#H1
Renesas Electronics America

MOSFET N-CH

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: UPAK
  • Package / Case: TO-243AA
paquet: TO-243AA
Stock7 568
MOSFET (Metal Oxide)
60V
2.4A (Ta)
2.5V, 4.5V
-
2nC @ 4.5V
170pF @ 10V
±12V
-
1.5W (Ta)
270 mOhm @ 1.2A, 4.5V
150°C (TJ)
Surface Mount
UPAK
TO-243AA
RJK6024DPH-E0#T2
Renesas Electronics America

MOSFET N-CH 600V 0.4A LDPAK

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
paquet: -
Stock3 456
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RJK6014DPK-00#T0
Renesas Electronics America

MOSFET N-CH 600V 11A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 575 mOhm @ 8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
paquet: TO-3P-3, SC-65-3
Stock3 408
MOSFET (Metal Oxide)
600V
16A (Ta)
10V
-
45nC @ 10V
1800pF @ 25V
±30V
-
150W (Tc)
575 mOhm @ 8A, 10V
150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
RJK5002DPD-00#J2
Renesas Electronics America

MOSFET N-CH 500V 2.4A TO92

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 1.2A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MP-3A
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock5 344
MOSFET (Metal Oxide)
500V
2.4A (Ta)
10V
-
6.7nC @ 10V
165pF @ 25V
±30V
-
30W (Tc)
5 Ohm @ 1.2A, 10V
150°C (TJ)
Surface Mount
MP-3A
TO-252-3, DPak (2 Leads + Tab), SC-63
RJK0355DSP-01#J0
Renesas Electronics America

MOSFET N-CH 30V 12A 8-SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock2 528
MOSFET (Metal Oxide)
30V
12A (Ta)
4.5V, 10V
-
6nC @ 4.5V
860pF @ 10V
±20V
-
1.8W (Ta)
11.1 mOhm @ 6A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
RJK0349DSP-01#J0
Renesas Electronics America

MOSFET N-CH 30V 20A 8-SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3850pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock2 256
MOSFET (Metal Oxide)
30V
20A (Ta)
4.5V, 10V
-
25nC @ 4.5V
3850pF @ 10V
±20V
-
2.5W (Ta)
3.8 mOhm @ 10A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
N0439N-S19-AY
Renesas Electronics America

MOSFET N-CH 40V 100A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5850pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 147W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 45A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock4 640
MOSFET (Metal Oxide)
40V
90A (Tc)
10V
4V @ 250µA
102nC @ 10V
5850pF @ 25V
±20V
-
1.8W (Ta), 147W (Tc)
3.3 mOhm @ 45A, 10V
175°C (TJ)
Through Hole
TO-220
TO-220-3
HAT2299WP-EL-E
Renesas Electronics America

MOSFET N-CH WPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 7A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WPAK
  • Package / Case: 8-PowerWDFN
paquet: 8-PowerWDFN
Stock4 560
MOSFET (Metal Oxide)
150V
14A (Ta)
10V
-
15nC @ 10V
710pF @ 25V
±30V
-
25W (Tc)
110 mOhm @ 7A, 10V
150°C (TJ)
Surface Mount
8-WPAK
8-PowerWDFN