Page 24 - Modules de circuit d'attaque de puissance | Produits à semiconducteurs discrets | Heisener Electronics
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Modules de circuit d'attaque de puissance

Dossiers 694
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Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Configuration
Current
Voltage
Voltage - Isolation
Package / Case
GCMS007A120S7B1
Global Power Technologies Group

SIC MOSFET/SBD HALF BRIDGE MODUL

  • Type: MOSFET
  • Configuration: Half Bridge
  • Current: 360A
  • Voltage: 1200V
  • Voltage - Isolation: 2500Vrms
  • Package / Case: Power Module
paquet: Power Module
Stock4 960
Half Bridge
360A
1200V
2500Vrms
Power Module
APTLGT300A1208G
Microsemi Corporation

MOD IGBT 1200V 440A LP8

  • Type: IGBT
  • Configuration: Half Bridge
  • Current: 440A
  • Voltage: 1200V
  • Voltage - Isolation: 2500Vrms
  • Package / Case: 6-PowerSIP Module
paquet: 6-PowerSIP Module
Stock4 400
Half Bridge
440A
1200V
2500Vrms
6-PowerSIP Module
hot PM50RLB120
Powerex Inc.

MOD IPM L-SER 7PAC 1200V 50A

  • Type: IGBT
  • Configuration: 3 Phase
  • Current: 50A
  • Voltage: 1200V
  • Voltage - Isolation: 2500VDC
  • Package / Case: Power Module
paquet: Power Module
Stock4 464
3 Phase
50A
1200V
2500VDC
Power Module
BM63363S-VC
Rohm Semiconductor

IC IPM 600V IGBT SW 25HSDIP

  • Type: IGBT
  • Configuration: 3 Phase Inverter
  • Current: 10A
  • Voltage: 600V
  • Voltage - Isolation: 1500Vrms
  • Package / Case: 25-PowerDIP Module (1.327", 33.70mm)
paquet: 25-PowerDIP Module (1.327", 33.70mm)
Stock7 648
3 Phase Inverter
10A
600V
1500Vrms
25-PowerDIP Module (1.327", 33.70mm)