Produits Cree/Wolfspeed

C3M0280090J

Cree/Wolfspeed

MOSFET N-CH 900V 11A

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
• Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V
• Vgs (Max): +18V, -8V
• FET Feature: -
• Power Dissipation (Max): 50W (Tc)
• Rds On (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 15V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK-7
• Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

paquet: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

CGHV14250F

Cree/Wolfspeed

FET RF 125V 1.4GHZ 440162

• Transistor Type: HEMT
• Frequency: 1.2GHz ~ 1.4GHz
• Gain: 18dB
• Voltage - Test: 50V
• Current Rating: 42mA
• Noise Figure: -
• Current - Test: 500mA
• Power - Output: 330W
• Voltage - Rated: 125V
• Package / Case: 440162
• Supplier Device Package: 440162

paquet: 440162

C5D50065D

Cree/Wolfspeed

DIODE SCHOTTKY 650V 100A TO247-3

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 100A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 500µA @ 650V
• Capacitance @ Vr, F: 1970pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3
• Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-247-3