Produits Cree/Wolfspeed

C3M0065100J

Cree/Wolfspeed

MOSFET N-CH SIC 1KV 35A D2PAK-7

• FET Type: N-Channel
• Technology: SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs(th) (Max) @ Id: 3.5V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
• Vgs (Max): +15V, -4V
• FET Feature: -
• Power Dissipation (Max): 113.5W (Tc)
• Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK-7
• Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

paquet: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

C3M0120090D

Cree/Wolfspeed

900V, 120 MOHM, G3 SIC MOSFET

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs(th) (Max) @ Id: 3.5V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V
• Vgs (Max): +18V, -8V
• FET Feature: -
• Power Dissipation (Max): 97W (Tc)
• Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

paquet: TO-247-3

C3M0280090D

Cree/Wolfspeed

MOSFET N-CH 900V 11.5A

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
• Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V
• Vgs (Max): +18V, -8V
• FET Feature: -
• Power Dissipation (Max): 54W (Tc)
• Rds On (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 15V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

paquet: TO-247-3

CGHV60075D5-GP4

Cree/Wolfspeed

RF MOSFET HEMT 50V DIE

• Transistor Type: HEMT
• Frequency: 6GHz
• Gain: 17dB
• Voltage - Test: 50V
• Current Rating: -
• Noise Figure: -
• Current - Test: 125mA
• Power - Output: 75W
• Voltage - Rated: 150V
• Package / Case: Die
• Supplier Device Package: Die

paquet: Die

CGHV27060MP

Cree/Wolfspeed

IC HEMT TRANS 60W 50V 2700MZ

• Transistor Type: HEMT
• Frequency: 2.7GHz
• Gain: 16.5dB
• Voltage - Test: 50V
• Current Rating: 6.3A
• Noise Figure: -
• Current - Test: 125mA
• Power - Output: 80W
• Voltage - Rated: 150V
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-TSSOP

paquet: 20-TSSOP (0.173", 4.40mm Width)

CGHV27200F

Cree/Wolfspeed

FET RF 50V 2.7GHZ 440162

• Transistor Type: HEMT
• Frequency: 2.5GHz ~ 2.7GHz
• Gain: 15dB ~ 16dB
• Voltage - Test: 50V
• Current Rating: 12A
• Noise Figure: -
• Current - Test: 1A
• Power - Output: 200W
• Voltage - Rated: 50V
• Package / Case: 440162
• Supplier Device Package: 440162

paquet: 440162

CGHV96050F1

Cree/Wolfspeed

FET RF 100V 9.6GHZ 440210

• Transistor Type: HEMT
• Frequency: 7.9GHz ~ 9.6GHz
• Gain: 17dB
• Voltage - Test: 40V
• Current Rating: 13A
• Noise Figure: -
• Current - Test: 500mA
• Power - Output: 32W
• Voltage - Rated: 100V
• Package / Case: 440210
• Supplier Device Package: 440210

paquet: 440210

CGH60120D

Cree/Wolfspeed

RF MOSFET HEMT 28V DIE

• Transistor Type: HEMT
• Frequency: 6GHz
• Gain: 13dB
• Voltage - Test: 28V
• Current Rating: -
• Noise Figure: -
• Current - Test: 1A
• Power - Output: 120W
• Voltage - Rated: 84V
• Package / Case: Die
• Supplier Device Package: Die

paquet: Die

CGH27030F

Cree/Wolfspeed

RF MOSFET HEMT 28V 440166

• Transistor Type: HEMT
• Frequency: 3GHz
• Gain: 14.5dB
• Voltage - Test: 28V
• Current Rating: -
• Noise Figure: -
• Current - Test: 150mA
• Power - Output: 30W
• Voltage - Rated: 84V
• Package / Case: 440166
• Supplier Device Package: 440166

paquet: 440166

CGHV96050F2

Cree/Wolfspeed

FET RF 100V 9.6GHZ 440210

• Transistor Type: HEMT
• Frequency: 7.9GHz ~ 9.6GHz
• Gain: 10dB
• Voltage - Test: 40V
• Current Rating: 6A
• Noise Figure: -
• Current - Test: 500mA
• Power - Output: 70W
• Voltage - Rated: 100V
• Package / Case: 440210
• Supplier Device Package: 440210

paquet: 440210

CGHV27030S

Cree/Wolfspeed

RF MOSFET HEMT 50V 12VFDFN

• Transistor Type: HEMT
• Frequency: 6GHz
• Gain: 20.4dB
• Voltage - Test: 50V
• Current Rating: -
• Noise Figure: -
• Current - Test: 130mA
• Power - Output: 30W
• Voltage - Rated: 125V
• Package / Case: 12-VFDFN Exposed Pad
• Supplier Device Package: 12-DFN (4x3)

paquet: 12-VFDFN Exposed Pad

CGH40006S

Cree/Wolfspeed

FET RF 84V 6GHZ 6QFN

• Transistor Type: HEMT
• Frequency: 0Hz ~ 6GHz
• Gain: 12dB
• Voltage - Test: 28V
• Current Rating: -
• Noise Figure: -
• Current - Test: 100mA
• Power - Output: 8W
• Voltage - Rated: 84V
• Package / Case: 6-VDFN Exposed Pad
• Supplier Device Package: 6-QFN-EP (3x3)

paquet: 6-VDFN Exposed Pad

CSD10030A

Cree/Wolfspeed

DIODE SCHOTTKY 300V 10A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 300V
• Capacitance @ Vr, F: 660pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-220-2

C3D08065E

Cree/Wolfspeed

DIODE SCHOTTKY 650V 25.5A TO252

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 25.5A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 650V
• Capacitance @ Vr, F: 395pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2
• Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

C4D02120E-TR

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 9A TO252-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 9A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 1200V
• Capacitance @ Vr, F: 167pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2
• Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

C3D06060A

Cree/Wolfspeed

DIODE SCHOTTKY 600V 6A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 6A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: 294pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-220-2

C3D03060A

Cree/Wolfspeed

DIODE SCHOTTKY 600V 3A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 3A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: 155pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-220-2

C3D04065E

Cree/Wolfspeed

DIODE SCHOTTKY 650V 4A TO252-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 4A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 60µA @ 650V
• Capacitance @ Vr, F: 251pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2
• Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-252-3, DPak (2 Leads + Tab), SC-63

C3D10065A

Cree/Wolfspeed

DIODE SCHOTTKY 650V 10A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 10A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 60µA @ 650V
• Capacitance @ Vr, F: 480pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-220-2

C3D08065A

Cree/Wolfspeed

DIODE SCHOTTKY 650V 8A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 8A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 60µA @ 650V
• Capacitance @ Vr, F: 441pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-220-2

C3D25170H

Cree/Wolfspeed

DIODE SCHOTTKY 1.7KV 26.3A TO247

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1700V
• Current - Average Rectified (Io): 26.3A (DC)
• Voltage - Forward (Vf) (Max) @ If: 2.5V @ 25A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 100µA @ 1700V
• Capacitance @ Vr, F: 2079pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247-2
• Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-247-2

C3D10170H

Cree/Wolfspeed

DIODE SCHOTTKY 1.7KV 14.4A TO247

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1700V
• Current - Average Rectified (Io): 14.4A (DC)
• Voltage - Forward (Vf) (Max) @ If: 2V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 60µA @ 1700V
• Capacitance @ Vr, F: 827pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247-2
• Operating Temperature - Junction: -55°C ~ 175°C

paquet: TO-247-2

C4D15120D

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 24.5A TO247

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 24.5V (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 250µA @ 1200V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

paquet: TO-247-3

C2D10120D

Cree/Wolfspeed

DIODE ARRAY SCHOTTKY 1200V TO247

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 1200V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

paquet: TO-247-3

CMPA5585025F-TB

Cree/Wolfspeed

EVAL BOARD FOR CMPA5585025F

• Type: Amplifier
• Frequency: 5.5GHz ~ 8.5GHz
• For Use With/Related Products: CMPA5585025F
• Supplied Contents: Partially Populated Board - Main IC Not Included

paquet: -

CGHV59070F-AMP

Cree/Wolfspeed

EVAL BOARD WITH CGHV59070F

• Type: HEMT
• Frequency: 5.2GHz ~ 5.9GHz
• For Use With/Related Products: CGHV59070F
• Supplied Contents: Board

paquet: -

CGHV1F006S-AMP1

Cree/Wolfspeed

DEMO HEMT TRANS AMP1 CGHV1F006S

• Type: HEMT
• Frequency: 0Hz ~ 18GHz
• For Use With/Related Products: CGHV1F006
• Supplied Contents: Partially Populated Board - Main IC Not Included

paquet: -

CMPA2560025F-TB

Cree/Wolfspeed

BOARD DEMO AMP CKT CMPA2560025F

• Type: Amplifier
• Frequency: 2.5GHz ~ 6GHz
• For Use With/Related Products: CMPA2560025F
• Supplied Contents: Partially Populated Board - Main IC Not Included

paquet: -

CGHV14500-TB

Cree/Wolfspeed

TEST FIXTURE FOR CGHV14500

• Type: FET
• Frequency: 1.2GHz ~ 1.4GHz
• For Use With/Related Products: CGHV14500
• Supplied Contents: Partially Populated Board - Main IC Not Included

paquet: -

CGH40025F-TB

Cree/Wolfspeed

BOARD DEMO AMP CIRCUIT CGH40025

• Type: HEMT
• Frequency: 0Hz ~ 4.5GHz
• For Use With/Related Products: CGH40025F/ CGH40025P
• Supplied Contents: Partially Populated Board - Main IC Not Included

paquet: -