STMicroelectronics has released two STPOWER power modules with built-in 1200V silicon carbide (SiC) MOSFETs in mainstream configurations. Both modules are packaged in STMicroelectronics' ACEPACK 2 technology for high power density and easy installation.
The first module, A2F12M12W2-F1, is a four-pack module that provides a convenient and compact full-bridge power conversion solution for circuits such as DC/DC converters. The second module, A2U12M12W2-F2, adopts a three-level T-type inverter topology, with excellent turn-on energy efficiency and switching energy efficiency, and stable output voltage quality.
The MOSFETs in both modules are based on ST's second-generation SiC technology with an excellent RDS(on) x die area figure of merit, ensuring that the switches can handle high currents with very low power losses. The typical on-resistance RDS(on) of each chip is 13mΩ. Both full-bridge and T-type modules can be used to design high-power applications, while low thermal dissipation ensures excellent application energy efficiency and simple thermal management design.
The ACEPACK 2 is a compact package with high power density using a high-efficiency alumina substrate and direct copper cladding (DBC) die attach technology. External connections are crimp pins for easy installation in potentially harsh environments, such as electric vehicle (EV) and power conversion scenarios for charging piles, energy storage and solar energy. The dielectric withstand voltage of this package is 2.5kVrms, and an NTC temperature sensor is built-in, which can be used for system protection diagnostic functions.
