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Produits ON Semiconductor - Transistors - FET, MOSFET - Simples

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paquet
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot NDD04N50ZT4G
ON Semiconductor

MOSFET N-CH 500V 3A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 308pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 61W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock66 276
MOSFET (Metal Oxide)
500V
3A (Tc)
10V
4.5V @ 50µA
12nC @ 10V
308pF @ 25V
±30V
-
61W (Tc)
2.7 Ohm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
NTMFS4923NET1G
ON Semiconductor

MOSFET N-CH 30V 91A SO-8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 91A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 930mW (Ta), 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 30A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
paquet: 8-PowerTDFN, 5 Leads
Stock16 482
MOSFET (Metal Oxide)
30V
12.7A (Ta), 91A (Tc)
4.5V, 10V
2V @ 250µA
22nC @ 4.5V
4850pF @ 15V
±20V
-
930mW (Ta), 48W (Tc)
3.3 mOhm @ 30A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
hot NTMS4920NR2G
ON Semiconductor

MOSFET N-CH 30V 10.6A 8SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 58.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4068pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 820mW (Ta)
  • Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 7.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock533 088
MOSFET (Metal Oxide)
30V
10.6A (Ta)
4.5V, 10V
3V @ 250µA
58.9nC @ 10V
4068pF @ 25V
±20V
-
820mW (Ta)
4.3 mOhm @ 7.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
hot NTMS7N03R2G
ON Semiconductor

MOSFET N-CH 30V 4.8A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock140 532
MOSFET (Metal Oxide)
30V
4.8A (Ta)
4.5V, 10V
3V @ 250µA
43nC @ 10V
1190pF @ 25V
±20V
-
800mW (Ta)
23 mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
NTMFS4934NT3G
ON Semiconductor

MOSFET N-CH 30V 147A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 147A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5505pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 930mW (Ta), 69.44W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
paquet: 8-PowerTDFN, 5 Leads
Stock43 926
MOSFET (Metal Oxide)
30V
17.1A (Ta), 147A (Tc)
4.5V, 10V
2.2V @ 250µA
34nC @ 4.5V
5505pF @ 15V
±20V
-
930mW (Ta), 69.44W (Tc)
2 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
ECH8310-TL-H
ON Semiconductor

MOSFET P-CH 30V 9A ECH8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 4.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-ECH
  • Package / Case: 8-SMD, Flat Lead
paquet: 8-SMD, Flat Lead
Stock4 576
MOSFET (Metal Oxide)
30V
9A (Ta)
4V, 10V
-
28nC @ 10V
1400pF @ 10V
±20V
-
1.5W (Ta)
17 mOhm @ 4.5A, 10V
150°C (TJ)
Surface Mount
8-ECH
8-SMD, Flat Lead
NVF5P03T3G
ON Semiconductor

MOSFET P-CH 30V 3.7A SOT-223

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.56W (Ta)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 5.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
paquet: TO-261-4, TO-261AA
Stock5 776
MOSFET (Metal Oxide)
30V
3.7A (Ta)
4.5V, 10V
3V @ 250µA
38nC @ 10V
950pF @ 25V
±20V
-
1.56W (Ta)
100 mOhm @ 5.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
NTMFS5C468NLT1G
ON Semiconductor

MOSFET N-CH 40V SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.3 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
paquet: 8-PowerTDFN
Stock6 992
MOSFET (Metal Oxide)
40V
-
4.5V, 10V
2V @ 250µA
7.3nC @ 10V
570pF @ 20V
±20V
-
3.5W (Ta), 28W (Tc)
10.3 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
hot ATP106-TL-H
ON Semiconductor

MOSFET P-CH 40V 30A ATPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 15A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ATPAK
  • Package / Case: ATPAK (2 leads+tab)
paquet: ATPAK (2 leads+tab)
Stock27 360
MOSFET (Metal Oxide)
40V
30A (Ta)
4.5V, 10V
-
29nC @ 10V
1380pF @ 20V
±20V
-
40W (Tc)
25 mOhm @ 15A, 10V
150°C (TJ)
Surface Mount
ATPAK
ATPAK (2 leads+tab)
NTNS3193NZT5G
ON Semiconductor

MOSFET N-CH 20V 0.224A XLLGA3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 224mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 15.8pF @ 15V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 120mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 100mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-XLLGA (0.62x0.62)
  • Package / Case: 3-XFLGA
paquet: 3-XFLGA
Stock2 288
MOSFET (Metal Oxide)
20V
224mA (Ta)
1.5V, 4.5V
1V @ 250µA
0.7nC @ 4.5V
15.8pF @ 15V
±8V
-
120mW (Ta)
1.4 Ohm @ 100mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
3-XLLGA (0.62x0.62)
3-XFLGA
1HP04CH-TL-W
ON Semiconductor

MOSFET P-CH 100V 0.17A SOT-23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 18 Ohm @ 80mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-CPH
  • Package / Case: TO-236-3, SC-59, SOT-23-3
paquet: TO-236-3, SC-59, SOT-23-3
Stock3 328
MOSFET (Metal Oxide)
100V
170mA (Ta)
4V, 10V
2.6V @ 100µA
0.9nC @ 10V
14pF @ 20V
±20V
-
-
18 Ohm @ 80mA, 10V
150°C (TJ)
Surface Mount
3-CPH
TO-236-3, SC-59, SOT-23-3
hot EFC4612R-TR
ON Semiconductor

MOSFET N-CH 24V 6A EFCP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: EFCP1313-4CC-037
  • Package / Case: 4-XFBGA
paquet: 4-XFBGA
Stock28 800
MOSFET (Metal Oxide)
24V
6A (Ta)
-
1.3V @ 1mA
7nC @ 4.5V
-
±12V
-
1.6W (Ta)
45 mOhm @ 3A, 4.5V
150°C (TJ)
Surface Mount
EFCP1313-4CC-037
4-XFBGA
hot NTD3055-150T4G
ON Semiconductor

MOSFET N-CH 60V 9A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock1 293 144
MOSFET (Metal Oxide)
60V
9A (Ta)
10V
4V @ 250µA
15nC @ 10V
280pF @ 25V
±20V
-
1.5W (Ta), 28.8W (Tj)
150 mOhm @ 4.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
NVD3055L170T4G-VF01
ON Semiconductor

MOSFET N-CH 60V 9A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 28.5W (Tj)
  • Rds On (Max) @ Id, Vgs: 170 mOhm @ 4.5A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock3 248
MOSFET (Metal Oxide)
60V
9A (Ta)
5V
2V @ 250µA
10nC @ 5V
275pF @ 25V
±15V
-
1.5W (Ta), 28.5W (Tj)
170 mOhm @ 4.5A, 5V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
ATP404-TL-H
ON Semiconductor

MOSFET N-CH 60V 95A ATPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 95A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 48A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ATPAK
  • Package / Case: ATPAK (2 leads+tab)
paquet: ATPAK (2 leads+tab)
Stock28 038
MOSFET (Metal Oxide)
60V
95A (Ta)
4.5V, 10V
-
120nC @ 10V
6400pF @ 20V
±20V
-
70W (Tc)
7.2 mOhm @ 48A, 10V
150°C (TJ)
Surface Mount
ATPAK
ATPAK (2 leads+tab)
hot NTNS3190NZT5G
ON Semiconductor

MOSFET N-CH 20V 0.224A XLLGA3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 224mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 15.8pF @ 15V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 120mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 100mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-XLLGA (0.62x0.62)
  • Package / Case: 3-XFDFN
paquet: 3-XFDFN
Stock216 000
MOSFET (Metal Oxide)
20V
224mA (Ta)
1.5V, 4.5V
1V @ 250µA
0.7nC @ 4.5V
15.8pF @ 15V
±8V
-
120mW (Ta)
1.4 Ohm @ 100mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
3-XLLGA (0.62x0.62)
3-XFDFN
hot NTTFS4928NTAG
ON Semiconductor

MOSFET N-CH 30V 7.3A 8WDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 913pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 810mW (Ta), 20.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
paquet: 8-PowerWDFN
Stock352 212
MOSFET (Metal Oxide)
30V
7.3A (Ta), 37A (Tc)
4.5V, 10V
2.2V @ 250µA
16nC @ 10V
913pF @ 15V
±20V
-
810mW (Ta), 20.8W (Tc)
9 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
SVD5867NLT4G
ON Semiconductor

MOSFET N-CH 60V 18A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Ta), 43W (Tc)
  • Rds On (Max) @ Id, Vgs: 39 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock6 368
MOSFET (Metal Oxide)
60V
22A (Tc)
4.5V, 10V
2.5V @ 250µA
15nC @ 10V
675pF @ 25V
±20V
-
3.3W (Ta), 43W (Tc)
39 mOhm @ 11A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTMS4801NR2G
ON Semiconductor

MOSFET N-CH 30V 7.5A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2201pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock1 076 352
MOSFET (Metal Oxide)
30V
7.5A (Ta)
4.5V, 10V
2.5V @ 250µA
25nC @ 10V
2201pF @ 25V
±20V
-
800mW (Ta)
9 mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
hot NTLJS4114NT1G
ON Semiconductor

MOSFET N-CH 30V 3.6A 6-WDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-WDFN (2x2)
  • Package / Case: 6-WDFN Exposed Pad
paquet: 6-WDFN Exposed Pad
Stock572 652
MOSFET (Metal Oxide)
30V
3.6A (Ta)
1.8V, 4.5V
1V @ 250µA
13nC @ 4.5V
650pF @ 15V
±12V
-
700mW (Ta)
35 mOhm @ 2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-WDFN (2x2)
6-WDFN Exposed Pad
hot NTLUS3A18PZTAG
ON Semiconductor

MOSFET P-CH 20V 8.2A 6UDFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UDFN (2x2)
  • Package / Case: 6-UDFN Exposed Pad
paquet: 6-UDFN Exposed Pad
Stock2 016 240
MOSFET (Metal Oxide)
20V
5.1A (Ta)
1.5V, 4.5V
1V @ 250µA
28nC @ 4.5V
2240pF @ 15V
±8V
-
700mW (Ta)
18 mOhm @ 7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN (2x2)
6-UDFN Exposed Pad
NVD5807NT4G-VF01
ON Semiconductor

MOSFET N-CH 40V 23A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 603pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 31 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock3 568
MOSFET (Metal Oxide)
40V
23A (Tc)
4.5V, 10V
2.5V @ 250µA
20nC @ 10V
603pF @ 25V
±20V
-
33W (Tc)
31 mOhm @ 5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTD4863NT4G
ON Semiconductor

MOSFET N-CH 25V 9.2A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.27W (Ta), 36.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock1 517 832
MOSFET (Metal Oxide)
25V
9.2A (Ta), 49A (Tc)
4.5V, 10V
2.5V @ 250µA
13.5nC @ 4.5V
990pF @ 12V
±20V
-
1.27W (Ta), 36.6W (Tc)
9.3 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
CPH6354-TL-W
ON Semiconductor

MOSFET P-CH 60V 4A CPH6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-CPH
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
paquet: SOT-23-6 Thin, TSOT-23-6
Stock7 056
MOSFET (Metal Oxide)
60V
4A (Ta)
4V, 10V
2.6V @ 1mA
14nC @ 10V
600pF @ 20V
±20V
-
1.6W (Ta)
100 mOhm @ 2A, 10V
150°C (TJ)
Surface Mount
6-CPH
SOT-23-6 Thin, TSOT-23-6
hot NTHD3101FT1G
ON Semiconductor

MOSFET P-CH 20V 3.2A CHIPFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ChipFET?
  • Package / Case: 8-SMD, Flat Lead
paquet: 8-SMD, Flat Lead
Stock3 190 344
MOSFET (Metal Oxide)
20V
3.2A (Tj)
1.8V, 4.5V
1.5V @ 250µA
7.4nC @ 4.5V
680pF @ 10V
±8V
Schottky Diode (Isolated)
1.1W (Ta)
80 mOhm @ 3.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
ChipFET?
8-SMD, Flat Lead
hot PCP1403-TD-H
ON Semiconductor

MOSFET N-CH 60V 4.5A SOT89

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 117 mOhm @ 2A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-89/PCP-1
  • Package / Case: TO-243AA
paquet: TO-243AA
Stock24 000
MOSFET (Metal Oxide)
60V
4.5A (Ta)
4V, 10V
2.6V @ 1mA
6.7nC @ 10V
310pF @ 20V
±20V
-
3.5W (Tc)
117 mOhm @ 2A, 10V
150°C (TJ)
Surface Mount
SOT-89/PCP-1
TO-243AA
hot NVTR01P02LT1G
ON Semiconductor

MOSFET P-CH 20V 1.3A SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 5V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 220 mOhm @ 750mA, 4.5V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
paquet: TO-236-3, SC-59, SOT-23-3
Stock1 682 436
MOSFET (Metal Oxide)
20V
1.3A (Ta)
2.5V, 4.5V
1.25V @ 250µA
3.1nC @ 4V
225pF @ 5V
±12V
-
400mW (Ta)
220 mOhm @ 750mA, 4.5V
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
hot NTA4151PT1G
ON Semiconductor

MOSFET P-CH 20V 0.76A SOT-416

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 760mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 156pF @ 5V
  • Vgs (Max): ±6V
  • FET Feature: -
  • Power Dissipation (Max): 301mW (Tj)
  • Rds On (Max) @ Id, Vgs: 360 mOhm @ 350mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75, SOT-416
  • Package / Case: SC-75, SOT-416
paquet: SC-75, SOT-416
Stock3 401 076
MOSFET (Metal Oxide)
20V
760mA (Tj)
1.8V, 4.5V
450mV @ 250µA
2.1nC @ 4.5V
156pF @ 5V
±6V
-
301mW (Tj)
360 mOhm @ 350mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-75, SOT-416
SC-75, SOT-416