Page 3 - Produits Cree/Wolfspeed | Heisener Electronics
Contactez nous
SalesDept@heisener.com 86-755-83210559-827
Connexion/S'inscrire
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Chariot 0

Produits Cree/Wolfspeed

Dossiers 243
Page  3/9
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
C3M0075120J
Cree/Wolfspeed

1200V, 75 MOHM, G3 SIC MOSFET

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 4V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 1000V
  • Vgs (Max): +19V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 113.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 20A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK-7
  • Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
paquet: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
Stock2 576
C2M0040120D
Cree/Wolfspeed

MOSFET N-CH 1200V 60A TO-247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 115nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1893pF @ 1000V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 330W (Tc)
  • Rds On (Max) @ Id, Vgs: 52 mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
paquet: TO-247-3
Stock4 448
C3M0280090D
Cree/Wolfspeed

MOSFET N-CH 900V 11.5A

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V
  • Vgs (Max): +18V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 54W (Tc)
  • Rds On (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
paquet: TO-247-3
Stock18 216
CGHV27015S
Cree/Wolfspeed

RF MOSFET HEMT 50V 12VFDFN

  • Transistor Type: HEMT
  • Frequency: 6GHz
  • Gain: 21dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 60mA
  • Power - Output: 15W
  • Voltage - Rated: 125V
  • Package / Case: 12-VFDFN Exposed Pad
  • Supplier Device Package: 12-DFN (4x3)
paquet: 12-VFDFN Exposed Pad
Stock6 288
CGHV22100F
Cree/Wolfspeed

FET RF 125V 2.2GHZ 440162

  • Transistor Type: HEMT
  • Frequency: 1.8GHz ~ 2.2GHz
  • Gain: 20dB
  • Voltage - Test: 50V
  • Current Rating: 6A
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 100W
  • Voltage - Rated: 125V
  • Package / Case: 440162
  • Supplier Device Package: 440162
paquet: 440162
Stock4 848
CGHV1F025S
Cree/Wolfspeed

FET RF 100V 6GHZ 12DFN

  • Transistor Type: HEMT
  • Frequency: 6GHz
  • Gain: 16dB
  • Voltage - Test: 40V
  • Current Rating: 2A
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 29W
  • Voltage - Rated: 100V
  • Package / Case: 12-VFDFN Exposed Pad
  • Supplier Device Package: 12-DFN (4x3)
paquet: 12-VFDFN Exposed Pad
Stock7 312
CGH60030D-GP4
Cree/Wolfspeed

RF MOSFET HEMT 28V DIE

  • Transistor Type: HEMT
  • Frequency: 6GHz
  • Gain: 15dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 30W
  • Voltage - Rated: 84V
  • Package / Case: Die
  • Supplier Device Package: Die
paquet: Die
Stock7 088
CGHV59350F
Cree/Wolfspeed

FET RF 125V 5.9GHZ 440217

  • Transistor Type: HEMT
  • Frequency: 5.2GHz ~ 5.9GHz
  • Gain: 11.2dB
  • Voltage - Test: 50V
  • Current Rating: 24A
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 450W
  • Voltage - Rated: 125V
  • Package / Case: 440217
  • Supplier Device Package: 440217
paquet: 440217
Stock4 528
CGHV31500F
Cree/Wolfspeed

FET RF 125V 24A 440217

  • Transistor Type: HEMT
  • Frequency: 2.7GHz ~ 3.1GHz
  • Gain: 13.5dB
  • Voltage - Test: 50V
  • Current Rating: 24A
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 500W
  • Voltage - Rated: 125V
  • Package / Case: 440217
  • Supplier Device Package: 440217
paquet: 440217
Stock5 904
CGH40090PP
Cree/Wolfspeed

FET RF 84V 4GHZ 440199

  • Transistor Type: HEMT
  • Frequency: 0Hz ~ 4GHz
  • Gain: 12.5dB
  • Voltage - Test: 28V
  • Current Rating: 28A
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 100W
  • Voltage - Rated: 84V
  • Package / Case: 440199
  • Supplier Device Package: 440199
paquet: 440199
Stock6 276
CGHV40050F
Cree/Wolfspeed

FET RF 150V 4GHZ 440193

  • Transistor Type: HEMT
  • Frequency: 0Hz ~ 4GHz
  • Gain: 12.5dB
  • Voltage - Test: 50V
  • Current Rating: 6.3A
  • Noise Figure: -
  • Current - Test: 300mA
  • Power - Output: 50W
  • Voltage - Rated: 150V
  • Package / Case: 440193
  • Supplier Device Package: 440193
paquet: 440193
Stock7 920
CGH27060F
Cree/Wolfspeed

RF MOSFET HEMT 28V 440193

  • Transistor Type: HEMT
  • Frequency: 3GHz
  • Gain: 13dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 300mA
  • Power - Output: 60W
  • Voltage - Rated: 84V
  • Package / Case: 440193
  • Supplier Device Package: 440193
paquet: 440193
Stock6 400
CGH55030F1
Cree/Wolfspeed

FET RF 84V 5.8GHZ 440166

  • Transistor Type: HEMT
  • Frequency: 5.5GHz ~ 5.8GHz
  • Gain: 10dB
  • Voltage - Test: 28V
  • Current Rating: 3A
  • Noise Figure: -
  • Current - Test: 250mA
  • Power - Output: 30W
  • Voltage - Rated: 84V
  • Package / Case: 440166
  • Supplier Device Package: 440166
paquet: 440166
Stock7 776
C4D05120E-TR
Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 19A TO252-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 19A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 150µA @ 1200V
  • Capacitance @ Vr, F: 390pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-2
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock3 568
C4D02120E-TR
Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 9A TO252-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 9A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 50µA @ 1200V
  • Capacitance @ Vr, F: 167pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-2
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock4 688
hot C3D06060A
Cree/Wolfspeed

DIODE SCHOTTKY 600V 6A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 6A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: 294pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: TO-220-2
Stock29 184
C3D03060A
Cree/Wolfspeed

DIODE SCHOTTKY 600V 3A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: 155pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: TO-220-2
Stock8 640
hot C3D04060A
Cree/Wolfspeed

DIODE SCHOTTKY 600V 4A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: 251pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: TO-220-2
Stock36 240
hot C3D02060F
Cree/Wolfspeed

DIODE SCHOTTKY 600V 4A TO220-F2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: 120pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: TO-220-F2
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: TO-220-2 Full Pack, Isolated Tab
Stock17 256
C3D16065A
Cree/Wolfspeed

DIODE SCHOTTKY 650V 39A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 39A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 16A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 95µA @ 650V
  • Capacitance @ Vr, F: 878pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: TO-220-2
Stock18 828
C2D05120E
Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 17.5A TO252

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 1200V
  • Capacitance @ Vr, F: 455pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-2
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock7 188
C2D10120A
Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 10A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 1200V
  • Capacitance @ Vr, F: 1000pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: TO-220-2
Stock19 740
C3D10065A
Cree/Wolfspeed

DIODE SCHOTTKY 650V 10A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 60µA @ 650V
  • Capacitance @ Vr, F: 480pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: TO-220-2
Stock16 980
C4D08120A
Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 8A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 8A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 7.5A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 250µA @ 1200V
  • Capacitance @ Vr, F: 560pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: TO-220-2
Stock9 036
hot C3D08060A
Cree/Wolfspeed

DIODE SCHOTTKY 600V 8A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: 441pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: TO-220-2
Stock34 488
CGHV40100P-TB
Cree/Wolfspeed

TEST FIXTURE FOR CGHV40100P

  • Type: FET
  • Frequency: 500MHz ~ 2.5GHz
  • For Use With/Related Products: CGHV40100
  • Supplied Contents: Partially Populated Board - Main IC Not Included
paquet: -
Stock3 420
CGHV35150-TB
Cree/Wolfspeed

TEST FIXTURE FOR CGHV35150F

  • Type: FET
  • Frequency: 2.9GHz ~ 3.5GHz
  • For Use With/Related Products: CGHV35150
  • Supplied Contents: Partially Populated Board - Main IC Not Included
paquet: -
Stock6 354
CGH40006P-TB
Cree/Wolfspeed

BOARD DEMO AMP CIRCUIT CGH40006P

  • Type: HEMT
  • Frequency: 500MHz ~ 6GHz
  • For Use With/Related Products: CGH40006P
  • Supplied Contents: Partially Populated Board - Main IC Not Included
paquet: -
Stock5 148