Produits Renesas Electronics America - Diodes - Redresseurs - Matrices | Heisener Electronics
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Produits Renesas Electronics America - Diodes - Redresseurs - Matrices

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Fabricant
Description
paquet
Stock
Quantité
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io) (per Diode)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Operating Temperature - Junction
Mounting Type
Package / Case
Supplier Device Package
RJU60C3WDPP-M0#T2
Renesas Electronics America

DIODE ARRAY GP 600V 60A TO220FP

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 60A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2.1V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 90ns
  • Current - Reverse Leakage @ Vr: 2µA @ 600V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220FP-2L
paquet: TO-220-2 Full Pack
Stock3 520
Standard
600V
60A (DC)
2.1V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
90ns
2µA @ 600V
150°C (Max)
Through Hole
TO-220-2 Full Pack
TO-220FP-2L
RJS6005WDPK-00#T0
Renesas Electronics America

DIODE GEN PURP 600V 30A

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 15A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 15ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature - Junction: -55°C ~ 155°C
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
paquet: TO-3P-3, SC-65-3
Stock2 912
Schottky
600V
15A (DC)
1.8V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
15ns
10µA @ 600V
-55°C ~ 155°C
Through Hole
TO-3P-3, SC-65-3
TO-3P
RJS6004WDPK-00#T0
Renesas Electronics America

DIODE GEN PURP 600V 20A

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 15ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-3P
paquet: TO-220-3 Full Pack
Stock7 520
Schottky
600V
10A (DC)
1.8V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
15ns
10µA @ 600V
-55°C ~ 150°C
Through Hole
TO-220-3 Full Pack
TO-3P