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Infineon Technologies |
IGBT 600V 16A 77W D2PAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 16A
- Current - Collector Pulsed (Icm): 18A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
- Power - Max: 77W
- Switching Energy: 56µJ (on), 122µJ (off)
- Input Type: Standard
- Gate Charge: 13nC
- Td (on/off) @ 25°C: 27ns/75ns
- Test Condition: 400V, 6A, 47 Ohm, 15V
- Reverse Recovery Time (trr): 74ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5 408 |
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Infineon Technologies |
IGBT 600V 62A 625W TO247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 62A
- Current - Collector Pulsed (Icm): 84A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
- Power - Max: 625W
- Switching Energy: 298µJ (on), 147µJ (off)
- Input Type: Standard
- Gate Charge: 270nC
- Td (on/off) @ 25°C: 35ns/142ns
- Test Condition: 400V, 20A, 4.7 Ohm, 15V
- Reverse Recovery Time (trr): 41ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
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paquet: TO-247-3 |
Stock3 040 |
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Infineon Technologies |
MOSFET N-CH 60V 2.9A SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
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paquet: TO-261-4, TO-261AA |
Stock4 048 |
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Infineon Technologies |
MOSFET N-CH 30V 13A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 13A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? ST
- Package / Case: DirectFET? Isometric ST
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paquet: DirectFET? Isometric ST |
Stock4 864 |
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Infineon Technologies |
MOSFET N-CH 55V 80A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 230µA
- Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock18 012 |
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Infineon Technologies |
MOSFET N-CH 55V 100A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 230µA
- Gate Charge (Qg) (Max) @ Vgs: 480nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 21620pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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paquet: TO-220-3 |
Stock3 984 |
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Infineon Technologies |
MOSFET N-CH 60V 57A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 92W (Tc)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 34A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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paquet: TO-220-3 |
Stock4 912 |
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Infineon Technologies |
MOSFET N-CH 60V 48A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 29A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock15 204 |
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Infineon Technologies |
MOSFET N-CH 40V 95A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4549pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 57A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB Full-Pak
- Package / Case: TO-220-3 Full Pack
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paquet: TO-220-3 Full Pack |
Stock4 928 |
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Infineon Technologies |
MOSFET N-CH 55V 28A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 17A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7 424 |
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Infineon Technologies |
TRANS PNP 80V 1A SOT223
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
- Power - Max: 2W
- Frequency - Transition: 125MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
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paquet: TO-261-4, TO-261AA |
Stock7 776 |
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Infineon Technologies |
TRANSISTOR RF NPN 4.5V SOT-343
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5V
- Frequency - Transition: 25GHz
- Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
- Gain: 23dB
- Power - Max: 75mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
- Current - Collector (Ic) (Max): 25mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4
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paquet: SC-82A, SOT-343 |
Stock5 344 |
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Infineon Technologies |
DIODE RF PIN 150V 100MA SC79
- Diode Type: PIN - Single
- Voltage - Peak Reverse (Max): 150V
- Current - Max: 100mA
- Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
- Resistance @ If, F: 1.35 Ohm @ 100mA, 100MHz
- Power Dissipation (Max): 250mW
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-79, SOD-523
- Supplier Device Package: PG-SC79-2
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paquet: SC-79, SOD-523 |
Stock322 440 |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 23A TO220-2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 23A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.15V @ 9A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 140ns
- Current - Reverse Leakage @ Vr: 100µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2
- Operating Temperature - Junction: -55°C ~ 150°C
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paquet: TO-220-2 |
Stock7 888 |
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Infineon Technologies |
DIODE SCHOTTKY 650V 12A TO247-3
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io) (per Diode): 12A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 190µA @ 650V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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paquet: TO-247-3 |
Stock5 168 |
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Infineon Technologies |
IC HIGH SIDE PWR SWITCH 14TSOP
- Switch Type: General Purpose
- Number of Outputs: 2
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 3.1 V ~ 28 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 7.5A
- Rds On (Typ): 9 mOhm
- Input Type: -
- Features: -
- Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: PG-TSDSO-14-22
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paquet: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad |
Stock22 560 |
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Infineon Technologies |
IC PWR SWITCH 170W TO-220-7-11
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 5 V ~ 34 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 55A
- Rds On (Typ): 4.4 mOhm
- Input Type: Non-Inverting
- Features: Auto Restart
- Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-220-7 (Formed Leads)
- Supplier Device Package: PG-TO220-7
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paquet: TO-220-7 (Formed Leads) |
Stock7 524 |
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Infineon Technologies |
IC MOTOR DRIVER PAR 14SOIC
- Motor Type - Stepper: -
- Motor Type - AC, DC: -
- Function: -
- Output Configuration: -
- Interface: -
- Technology: -
- Step Resolution: -
- Applications: -
- Current - Output: -
- Voltage - Supply: -
- Voltage - Load: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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paquet: - |
Stock6 032 |
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Infineon Technologies |
IC MOTOR DRIVER PAR TO220-7
- Motor Type - Stepper: -
- Motor Type - AC, DC: Brushed DC
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (2)
- Interface: Parallel
- Technology: DMOS
- Step Resolution: -
- Applications: Automotive
- Current - Output: 5A
- Voltage - Supply: 5.3 V ~ 40 V
- Voltage - Load: 5.3 V ~ 40 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-7 (Formed Leads)
- Supplier Device Package: P-TO220-7
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paquet: TO-220-7 (Formed Leads) |
Stock3 856 |
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Infineon Technologies |
IC CONTROLLR BALLAST 600V 14SOIC
- Type: Ballast Controller
- Frequency: 36kHz ~ 44kHz
- Voltage - Supply: 10.5 V ~ 16.5 V
- Current - Supply: 10mA
- Current - Output Source/Sink: -
- Dimming: No
- Operating Temperature: -25°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SOIC
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paquet: 14-SOIC (0.154", 3.90mm Width) |
Stock213 108 |
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Infineon Technologies |
IC MOSFET DRIVER LIMITING 8-DIP
- Driven Configuration: High-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 0 V ~ 18 V
- Logic Voltage - VIL, VIH: 0.8V, 2.2V
- Current - Peak Output (Source, Sink): 1.6A, 3.3A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 500V
- Rise / Fall Time (Typ): 43ns, 26ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-DIP
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paquet: 8-DIP (0.300", 7.62mm) |
Stock25 164 |
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Infineon Technologies |
IC DRIVER HALF BRIDGE 14SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.9V
- Current - Peak Output (Source, Sink): 200mA, 350mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 150ns, 50ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SOIC
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paquet: 14-SOIC (0.154", 3.90mm Width) |
Stock18 624 |
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Infineon Technologies |
IC DRIVER HALF BRIDGE 14SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.7V
- Current - Peak Output (Source, Sink): 1.9A, 2.3A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 40ns, 20ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SOIC
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paquet: 14-SOIC (0.154", 3.90mm Width) |
Stock12 600 |
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Infineon Technologies |
IC MCU 8BIT 24KB FLASH 48TQFP
- Core Processor: XC800
- Core Size: 8-Bit
- Speed: 24MHz
- Connectivity: SSI, UART/USART
- Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
- Number of I/O: 34
- Program Memory Size: 24KB (24K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 1.75K x 8
- Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
- Data Converters: A/D 8x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 48-TQFP
- Supplier Device Package: 48-TQFP (7x7)
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paquet: 48-TQFP |
Stock5 296 |
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Infineon Technologies |
IC MCU 16BIT ROMLESS 144MQFP
- Core Processor: C166
- Core Size: 16-Bit
- Speed: 40MHz
- Connectivity: CAN, EBI/EMI, SPI, UART/USART
- Peripherals: POR, PWM, WDT
- Number of I/O: 111
- Program Memory Size: -
- Program Memory Type: ROMless
- EEPROM Size: -
- RAM Size: 11K x 8
- Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
- Data Converters: A/D 24x10b
- Oscillator Type: External
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 144-BQFP
- Supplier Device Package: PG-MQFP-144
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paquet: 144-BQFP |
Stock5 360 |
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Infineon Technologies |
IC MCU 8BIT 64KB FLASH 64LQFP
- Core Processor: XC800
- Core Size: 8-Bit
- Speed: 27MHz
- Connectivity: CAN, LIN, SSI, UART/USART
- Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
- Number of I/O: 40
- Program Memory Size: 64KB (64K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 3.25K x 8
- Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
- Data Converters: A/D 8x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 64-LQFP
- Supplier Device Package: 64-LQFP (10x10)
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paquet: 64-LQFP |
Stock7 696 |
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Infineon Technologies |
TVS DIODE 18.5VWM 17VC TSLP2-17
- Type: Zener
- Unidirectional Channels: -
- Bidirectional Channels: 1
- Voltage - Reverse Standoff (Typ): 18.5V (Max)
- Voltage - Breakdown (Min): 20V
- Voltage - Clamping (Max) @ Ipp: 17V (Typ)
- Current - Peak Pulse (10/1000µs): 2A (8/20µs)
- Power - Peak Pulse: -
- Power Line Protection: No
- Applications: RF Antenna
- Capacitance @ Frequency: 0.3pF @ 1MHz
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: SOD-882
- Supplier Device Package: TSLP-2-17
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paquet: SOD-882 |
Stock7 758 |
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Infineon Technologies |
IC TIRE PRESSURE SENSOR DSOSP-14
- Sensor Type: Tire Pressure Monitoring (TPMS)
- Output Type: Digital
- Operating Temperature: -
|
paquet: - |
Stock31 836 |
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Infineon Technologies |
SWITCH HIGH SIDE POWER TO252-5
- Switch Type: -
- Number of Outputs: -
- Ratio - Input:Output: -
- Output Configuration: -
- Output Type: -
- Interface: -
- Voltage - Load: -
- Voltage - Supply (Vcc/Vdd): -
- Current - Output (Max): -
- Rds On (Typ): -
- Input Type: -
- Features: -
- Fault Protection: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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paquet: - |
Stock7 296 |
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Infineon Technologies |
IC SWITCH PWR HISIDE TO252-5
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 6 V ~ 52 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 1.8A
- Rds On (Typ): 150 mOhm
- Input Type: Non-Inverting
- Features: Auto Restart
- Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Supplier Device Package: PG-TO252-5
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paquet: TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Stock23 736 |
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