Produits Exar Corporation - Transistors - FET, MOSFET - Simples | Heisener Electronics
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Produits Exar Corporation - Transistors - FET, MOSFET - Simples

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Description
paquet
Stock
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
XR46000ESETR
Exar Corporation

MOSFET N-CH 600V 1.5A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 750mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
paquet: TO-261-4, TO-261AA
Stock21 600
MOSFET (Metal Oxide)
600V
1.5A (Tc)
10V
4V @ 250µA
7.5nC @ 10V
170pF @ 25V
±30V
-
20W (Tc)
8 Ohm @ 750mA, 10V
150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA