Page 1492 - Transistors - FET, MOSFET - Simples | Produits à semiconducteurs discrets | Heisener Electronics
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Transistors - FET, MOSFET - Simples

Dossiers 42 029
Page  1 492/1 502
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot IRLU7821PBF
Infineon Technologies

MOSFET N-CH 30V 65A I-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
paquet: TO-251-3 Short Leads, IPak, TO-251AA
Stock216 000
MOSFET (Metal Oxide)
30V
65A (Tc)
4.5V, 10V
1V @ 250µA
14nC @ 4.5V
1030pF @ 15V
±20V
-
75W (Tc)
10 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
IRF3808LPBF
Infineon Technologies

MOSFET N-CH 75V 106A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5310pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 82A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA
Stock5 328
MOSFET (Metal Oxide)
75V
106A (Tc)
10V
4V @ 250µA
220nC @ 10V
5310pF @ 25V
±20V
-
200W (Tc)
7 mOhm @ 82A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2Pak, TO-262AA
IRL1404L
Infineon Technologies

MOSFET N-CH 40V 160A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 95A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA
Stock3 280
MOSFET (Metal Oxide)
40V
160A (Tc)
4.3V, 10V
3V @ 250µA
140nC @ 5V
6600pF @ 25V
±20V
-
3.8W (Ta), 200W (Tc)
4 mOhm @ 95A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2Pak, TO-262AA
PSMN016-100XS,127
NXP

MOSFET N-CH 100V 32.1A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 32.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 46.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2404pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 46.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
paquet: TO-220-3 Full Pack, Isolated Tab
Stock3 776
MOSFET (Metal Oxide)
100V
32.1A (Tc)
10V
4V @ 1mA
46.2nC @ 10V
2404pF @ 50V
±20V
-
46.1W (Tc)
16 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack, Isolated Tab
BUK655R0-75C,127
NXP

MOSFET N-CH 75V 120A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 263W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock5 872
MOSFET (Metal Oxide)
75V
120A (Tc)
4.5V, 10V
2.8V @ 1mA
177nC @ 10V
11400pF @ 25V
±16V
-
263W (Tc)
5.3 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot NTTFS4823NTAG
ON Semiconductor

MOSFET N-CH 30V 7.1A 8WDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1013pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 660mW (Ta), 32.9W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
paquet: 8-PowerWDFN
Stock93 480
MOSFET (Metal Oxide)
30V
7.1A (Ta), 50A (Tc)
4.5V, 11.5V
2.5V @ 250µA
9nC @ 4.5V
1013pF @ 12V
±20V
-
660mW (Ta), 32.9W (Tc)
10.5 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
HUFA75321P3
Fairchild/ON Semiconductor

MOSFET N-CH 55V 35A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 93W (Tc)
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock6 208
MOSFET (Metal Oxide)
55V
35A (Tc)
10V
4V @ 250µA
44nC @ 20V
680pF @ 25V
±20V
-
93W (Tc)
34 mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot FDD24AN06LA0
Fairchild/ON Semiconductor

MOSFET N-CH 60V 40A D-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63
Stock1 167 048
MOSFET (Metal Oxide)
60V
7.1A (Ta), 40A (Tc)
5V, 10V
2V @ 250µA
21nC @ 5V
1850pF @ 25V
±20V
-
75W (Tc)
19 mOhm @ 40A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPak (2 Leads + Tab), SC-63
hot FDU8878
Fairchild/ON Semiconductor

MOSFET N-CH 30V 40A I-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
paquet: TO-251-3 Short Leads, IPak, TO-251AA
Stock15 312
MOSFET (Metal Oxide)
30V
11A (Ta), 40A (Tc)
4.5V, 10V
2.5V @ 250µA
26nC @ 10V
880pF @ 15V
±20V
-
40W (Tc)
15 mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-251
TO-251-3 Short Leads, IPak, TO-251AA
hot TPS1100DR
Texas Instruments

MOSFET P-CH 15V 1.6A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 15V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): +2V, -15V
  • FET Feature: -
  • Power Dissipation (Max): 791mW (Ta)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock493 872
MOSFET (Metal Oxide)
15V
1.6A (Ta)
2.7V, 10V
1.5V @ 250µA
5.45nC @ 10V
-
+2V, -15V
-
791mW (Ta)
180 mOhm @ 1.5A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
RJK0354DSP-00#J0
Renesas Electronics America

MOSFET N-CH 30V 16A 8-SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
paquet: 8-SOIC (0.154", 3.90mm Width)
Stock7 712
MOSFET (Metal Oxide)
30V
16A (Ta)
4.5V, 10V
-
12nC @ 4.5V
1740pF @ 10V
±20V
-
2W (Ta)
7 mOhm @ 8A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
TSM85N10CZ C0G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, TRENC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 210W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
paquet: TO-220-3
Stock6 416
MOSFET (Metal Oxide)
100V
81A (Tc)
10V
4V @ 250µA
154nC @ 10V
3900pF @ 30V
±20V
-
210W (Tc)
10 mOhm @ 40A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
TSM7NC65CF C0G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, PLANA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1169pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 44.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ITO-220S
  • Package / Case: TO-220-3 Full Pack
paquet: TO-220-3 Full Pack
Stock6 096
MOSFET (Metal Oxide)
650V
7A (Tc)
10V
4.5V @ 250µA
24nC @ 10V
1169pF @ 50V
±30V
-
44.6W (Tc)
1.35 Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
ITO-220S
TO-220-3 Full Pack
hot NTGS3446T1G
ON Semiconductor

MOSFET N-CH 20V 2.5A 6TSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 5.1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6
paquet: SOT-23-6
Stock2 052 828
MOSFET (Metal Oxide)
20V
2.5A (Ta)
2.5V, 4.5V
1.2V @ 250µA
15nC @ 4.5V
750pF @ 10V
±12V
-
500mW (Ta)
45 mOhm @ 5.1A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6
hot BSC079N03SG
Infineon Technologies

MOSFET N-CH 30V 40A TDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
paquet: 8-PowerTDFN
Stock353 076
MOSFET (Metal Oxide)
30V
14.6A (Ta), 40A (Tc)
4.5V, 10V
2V @ 30µA
17nC @ 5V
2230pF @ 15V
±20V
-
2.8W (Ta), 60W (Tc)
7.9 mOhm @ 40A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8
8-PowerTDFN
FDI150N10
Fairchild/ON Semiconductor

MOSFET N-CH 100V 57A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4760pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 49A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA
Stock20 892
MOSFET (Metal Oxide)
100V
57A (Tc)
10V
4.5V @ 250µA
69nC @ 10V
4760pF @ 25V
±20V
-
110W (Tc)
16 mOhm @ 49A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
BSP372NH6327XTSA1
Infineon Technologies

MOSFET N-CH 100V 1.7A SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 218µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 329pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 1.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA
paquet: TO-261-4, TO-261AA
Stock21 954
MOSFET (Metal Oxide)
100V
1.8A (Ta)
4.5V, 10V
1.8V @ 218µA
14.3nC @ 10V
329pF @ 25V
±20V
-
1.8W (Ta)
230 mOhm @ 1.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
BUK9Y19-100E,115
Nexperia USA Inc.

MOSFET N-CH 100V 56A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5085pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
paquet: SC-100, SOT-669
Stock34 578
MOSFET (Metal Oxide)
100V
56A (Tc)
5V
2.1V @ 1mA
39nC @ 5V
5085pF @ 25V
±10V
-
167W (Tc)
18 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
BUK9Y40-55B,115
Nexperia USA Inc.

MOSFET N-CH 55V 26A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 59W (Tc)
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
paquet: SC-100, SOT-669
Stock117 258
MOSFET (Metal Oxide)
55V
26A (Tc)
5V
2V @ 1mA
11nC @ 5V
1020pF @ 25V
±15V
-
59W (Tc)
36 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
hot IRLML2060TRPBF
Infineon Technologies

MOSFET N-CH 60V 1.2A SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.67nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 64pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 480 mOhm @ 1.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro3?/SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
paquet: TO-236-3, SC-59, SOT-23-3
Stock2 255 508
MOSFET (Metal Oxide)
60V
1.2A (Ta)
4.5V, 10V
2.5V @ 25µA
0.67nC @ 4.5V
64pF @ 25V
±16V
-
1.25W (Ta)
480 mOhm @ 1.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Micro3?/SOT-23
TO-236-3, SC-59, SOT-23-3
hot IXFN420N10T
IXYS

MOSFET N-CH 100V 420A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 420A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 670nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 47000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1070W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
paquet: SOT-227-4, miniBLOC
Stock5 872
MOSFET (Metal Oxide)
100V
420A
10V
5V @ 8mA
670nC @ 10V
47000pF @ 25V
±20V
-
1070W (Tc)
2.3 mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
PJW5N10_R2_00001
Panjit International Inc.

100V N-CHANNEL ENHANCEMENT MODE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
paquet: -
Request a Quote
MOSFET (Metal Oxide)
100 V
3.1A (Ta), 5A (Tc)
6V, 10V
3.5V @ 250µA
12 nC @ 10 V
707 pF @ 30 V
±20V
-
3.1W (Ta)
130mOhm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
SIHA21N80AE-GE3
Vishay Siliconix

MOSFET N-CH 800V 7.5A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1388 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Full Pack
  • Package / Case: TO-220-3 Full Pack
paquet: -
Stock63
MOSFET (Metal Oxide)
800 V
7.5A (Tc)
10V
4V @ 250µA
72 nC @ 10 V
1388 pF @ 100 V
±30V
-
33W (Tc)
235mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220 Full Pack
TO-220-3 Full Pack
DI005N03PW-AQ
Diotec Semiconductor

MOSFET POWERQFN 2X2 30V 0.02OHM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-QFN (2x2)
  • Package / Case: 6-UDFN Exposed Pad
paquet: -
Request a Quote
MOSFET (Metal Oxide)
30 V
5A (Ta)
4.5V, 10V
2V @ 250µA
11.7 nC @ 10 V
448 pF @ 15 V
±20V
-
700mW (Ta)
20mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-QFN (2x2)
6-UDFN Exposed Pad
NTBS2D7N06M7
onsemi

MOSFET N-CH 60V 110A D2PAK-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6655 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 176W (Tj)
  • Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
paquet: -
Stock3 624
MOSFET (Metal Oxide)
60 V
110A (Tc)
10V
4V @ 250µA
110 nC @ 10 V
6655 pF @ 30 V
±20V
-
176W (Tj)
2.7mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SIS4608DN-T1-GE3
Vishay Siliconix

N-CHANNEL 60 V (D-S) MOSFET POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 35.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Ta), 27.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.8mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8
  • Package / Case: PowerPAK® 1212-8
paquet: -
Stock17 565
MOSFET (Metal Oxide)
60 V
12.4A (Ta), 35.7A (Tc)
7.5V, 10V
4V @ 250µA
18 nC @ 10 V
740 pF @ 30 V
±20V
-
3.3W (Ta), 27.1W (Tc)
11.8mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
IXTA100N15X4
IXYS

MOSFET N-CH 150V 100A TO263AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3970 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.5mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AA
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
paquet: -
Request a Quote
MOSFET (Metal Oxide)
150 V
100A (Tc)
10V
4.5V @ 250µA
74 nC @ 10 V
3970 pF @ 25 V
±20V
-
375W (Tc)
11.5mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263AA
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DMP2110U-13
Diodes Incorporated

MOSFET P-CH 20V 3.5A SOT23 T&R 1

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
paquet: -
Stock30 000
MOSFET (Metal Oxide)
20 V
3.5A (Ta)
2.5V, 4.5V
1V @ 250µA
6 nC @ 4.5 V
443 pF @ 10 V
±10V
-
800mW (Ta)
80mOhm @ 2.8A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3