Image |
Référence |
Fabricant |
Description |
paquet |
Stock |
Quantité |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 100V 1.7A SOT-223
|
paquet: TO-261-4, TO-261AA |
Stock2 880 |
|
MOSFET (Metal Oxide) | 100V | 1.7A (Ta) | 10V | 4V @ 1mA | - | 550pF @ 25V | ±20V | - | 1.8W (Ta) | 300 mOhm @ 1.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 20V 16A DIRECTFET
|
paquet: DirectFET? Isometric MP |
Stock3 408 |
|
MOSFET (Metal Oxide) | 20V | 16A (Ta), 59A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 17nC @ 4.5V | 1250pF @ 10V | ±20V | - | 2.3W (Ta), 89W (Tc) | 5.6 mOhm @ 16A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MP | DirectFET? Isometric MP |
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ON Semiconductor |
MOSFET P-CH 30V 6A CPH6
|
paquet: - |
Stock3 888 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 60V 4.5A CPH6
|
paquet: SOT-23-6 Thin, TSOT-23-6 |
Stock28 428 |
|
MOSFET (Metal Oxide) | 60V | 4.5A (Ta) | 4V, 10V | - | 10nC @ 10V | 505pF @ 20V | ±20V | - | 1.6W (Ta) | 78 mOhm @ 2A, 10V | 150°C (TJ) | Surface Mount | 6-CPH | SOT-23-6 Thin, TSOT-23-6 |
||
Vishay Siliconix |
MOSFET N-CH 30V 8.6A 8TSSOP
|
paquet: 8-TSSOP (0.173", 4.40mm Width) |
Stock4 592 |
|
MOSFET (Metal Oxide) | 30V | 8.6A (Ta) | 2.5V, 10V | 600mV @ 250µA | 48nC @ 4.5V | - | ±12V | - | 1.08W (Ta) | 9 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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ON Semiconductor |
MOSFET N-CH 600V 7.5A TO220FP
|
paquet: TO-220-3 Full Pack |
Stock6 288 |
|
MOSFET (Metal Oxide) | 600V | 8.4A (Tc) | 10V | 4.5V @ 100µA | 39nC @ 10V | 1140pF @ 25V | ±30V | - | 36W (Tc) | 950 mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET P-CH 20V 0.215A SOT-723
|
paquet: SOT-723 |
Stock1 472 328 |
|
MOSFET (Metal Oxide) | 20V | 215mA (Ta) | 1.8V, 4.5V | 1.3V @ 250µA | - | 15.3pF @ 10V | ±8V | - | 280mW (Ta) | 4 Ohm @ 260mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-723 | SOT-723 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 5A SC-97
|
paquet: SC-97 |
Stock5 344 |
|
MOSFET (Metal Oxide) | 500V | 5A (Ta) | 10V | 4V @ 1mA | 17nC @ 10V | 780pF @ 10V | ±30V | - | 50W (Tc) | 1.5 Ohm @ 5A, 10V | 150°C (TJ) | Surface Mount | TFP (9.2x10.7) | SC-97 |
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ON Semiconductor |
MOSFET P-CH 20V 0.86A SOT-563
|
paquet: SOT-563, SOT-666 |
Stock6 432 |
|
MOSFET (Metal Oxide) | 20V | 860mA (Ta) | 1.8V, 4.5V | 1V @ 250µA | 5.6nC @ 4.5V | 458pF @ 16V | ±8V | - | 170mW (Ta) | 150 mOhm @ 950mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563 | SOT-563, SOT-666 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 900V 4.5A TO-3PF
|
paquet: SC-94 |
Stock7 712 |
|
MOSFET (Metal Oxide) | 900V | 4.5A (Tc) | 10V | 5V @ 250µA | 52nC @ 10V | 1880pF @ 25V | ±30V | - | 96W (Tc) | 1.9 Ohm @ 2.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | SC-94 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 80V 70A TO-220
|
paquet: TO-220-3 |
Stock163 476 |
|
MOSFET (Metal Oxide) | 80V | 70A (Tc) | 10V | 4V @ 250µA | 98nC @ 10V | 2700pF @ 25V | ±25V | - | 155W (Tc) | 17 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 36A SUPER247
|
paquet: TO-274AA |
Stock107 844 |
|
MOSFET (Metal Oxide) | 500V | 36A (Tc) | 10V | 4V @ 250µA | 180nC @ 10V | 5579pF @ 25V | ±30V | - | 446W (Tc) | 130 mOhm @ 22A, 10V | -55°C ~ 150°C (TJ) | Through Hole | SUPER-247 (TO-274AA) | TO-274AA |
||
Infineon Technologies |
MV POWER MOS
|
paquet: - |
Stock6 240 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 75V 100A TO262-3
|
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock7 088 |
|
MOSFET (Metal Oxide) | 75V | 100A (Tc) | 10V | 4V @ 250µA | 200nC @ 10V | 4700pF @ 25V | ±20V | - | 300W (Tc) | 7.1 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 75V 76A TO262
|
paquet: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock7 068 |
|
MOSFET (Metal Oxide) | 75V | 76A (Tc) | 6V, 10V | 3.7V @ 100µA | 109nC @ 10V | 4020pF @ 25V | ±20V | - | 125W (Tc) | 8.4 mOhm @ 46A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
IXYS |
MOSFET N-CH 250V 60A TO-268
|
paquet: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock3 536 |
|
MOSFET (Metal Oxide) | 250V | 60A (Tc) | 10V | 4V @ 4mA | 180nC @ 10V | 5100pF @ 25V | ±20V | - | 360W (Tc) | 47 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
IXYS |
MOSFET N-CH 1200V 0.2A DPAK
|
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6 640 |
|
MOSFET (Metal Oxide) | 1200V | 200mA (Tc) | 10V | 4V @ 100µA | 4.7nC @ 10V | 104pF @ 25V | ±20V | - | 33W (Tc) | 75 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET N-CH 40V SO8FL
|
paquet: 8-PowerTDFN, 5 Leads |
Stock6 912 |
|
MOSFET (Metal Oxide) | 40V | 35A (Ta), 185A (Tc) | 10V | 3.5V @ 250µA | 47nC @ 10V | 3300pF @ 25V | ±20V | - | 3.8W (Ta), 106W (Tc) | 1.7 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Fairchild/ON Semiconductor |
PT8 N-CH 40/20V POWER TRENCH MOS
|
paquet: 8-PowerWDFN |
Stock7 888 |
|
MOSFET (Metal Oxide) | 40V | 27A (Ta), 141A (Tc) | 4.5V, 10V | 3V @ 250µA | 80nC @ 10V | 5300pF @ 20V | ±20V | - | 2.8W (Ta), 75W (Tc) | 2.1 mOhm @ 27A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | Power33 | 8-PowerWDFN |
||
Vishay Siliconix |
MOSFET N-CH 60V 50A TO252
|
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4 784 |
|
MOSFET (Metal Oxide) | 60V | 97A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 125nC @ 10V | 6060pF @ 25V | ±20V | - | 136W (Tc) | 6.3 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET BVDSS: 31V 40V TO252
|
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4 336 |
|
MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 91nC @ 10V | 4234pF @ 20V | ±25V | - | 3.3W | 9.9 mOhm @ 9.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 25A TO-252
|
paquet: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock714 324 |
|
MOSFET (Metal Oxide) | 30V | 25A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 14nC @ 10V | 820pF @ 15V | ±20V | - | 2.5W (Ta), 21W (Tc) | 23 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, TRENC
|
paquet: 8-PowerWDFN |
Stock2 064 |
|
MOSFET (Metal Oxide) | 30V | 78A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 25nC @ 4.5V | 2557pF @ 15V | ±20V | - | 39W (Tc) | 3.8 mOhm @ 19A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (3x3) | 8-PowerWDFN |
||
TSC America Inc. |
MOSFET, SINGLE, P-CHANNEL, -20V,
|
paquet: TO-236-3, SC-59, SOT-23-3 |
Stock6 544 |
|
MOSFET (Metal Oxide) | 20V | 4.7A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 12.5nC @ 4.5V | 1020pF @ 10V | ±8V | - | 1.25W (Ta) | 39 mOhm @ 4.7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 80A TO-247
|
paquet: TO-247-3 |
Stock121 224 |
|
MOSFET (Metal Oxide) | 100V | 12A (Ta), 80A (Tc) | 6V, 10V | 4V @ 250µA | 110nC @ 10V | 6000pF @ 25V | ±20V | - | 310W (Tc) | 9 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Microsemi Corporation |
MOSFET N-CH 600V 94A TO264
|
paquet: TO-264-3, TO-264AA |
Stock6 240 |
|
MOSFET (Metal Oxide) | 600V | 94A (Tc) | 10V | 3.9V @ 5.4mA | 640nC @ 10V | 13600pF @ 25V | ±20V | - | 833W (Tc) | 35 mOhm @ 60A, 10V | -55°C ~ 150°C (TJ) | Through Hole | 264 MAX? [L2] | TO-264-3, TO-264AA |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 0.1A USV
|
paquet: 5-TSSOP, SC-70-5, SOT-353 |
Stock29 124 |
|
MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | - | - | 7.8pF @ 3V | ±20V | - | 200mW (Ta) | 4 Ohm @ 10mA, 4V | 150°C (TJ) | Surface Mount | USV | 5-TSSOP, SC-70-5, SOT-353 |
||
STMicroelectronics |
MOSFET N-CH 600V 20A D2PAK
|
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock390 000 |
|
MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 4V @ 250µA | 60nC @ 10V | 1800pF @ 50V | ±30V | - | 140W (Tc) | 165 mOhm @ 10A, 10V | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 5.5A
|
paquet: 3-SMD, Flat Leads |
Stock115 182 |
|
MOSFET (Metal Oxide) | 20V | 5.5A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 12.8nC @ 4.5V | 840pF @ 10V | ±8V | - | 500mW (Ta) | 29.8 mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |
||
Nexperia USA Inc. |
MOSFET N-CH 100V 3A SOT223
|
paquet: TO-261-4, TO-261AA |
Stock74 442 |
|
MOSFET (Metal Oxide) | 100V | 3A (Ta) | 10V | 4V @ 1mA | 21nC @ 10V | 633pF @ 25V | ±20V | - | 1.8W (Ta), 8.3W (Tc) | 90 mOhm @ 3A, 10V | -65°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |