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Diodes - Redresseurs - Simples

Dossiers 52 788
Page  22/1 886
Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
DS135AE
ON Semiconductor

DIODE GEN PURP 100V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: 150°C (Max)
paquet: DO-204AL, DO-41, Axial
Stock3 360
100V
1A
1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 100V
-
Through Hole
DO-204AL, DO-41, Axial
-
150°C (Max)
hot 20TQ045S
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 20A D2PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 570mV @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2.7mA @ 45V
  • Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Stock10 392
45V
20A
570mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
2.7mA @ 45V
1400pF @ 5V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 150°C
JANTXV1N1184
Microsemi Corporation

DIODE GEN PURP 100V 35A DO203AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: DO-203AB, DO-5, Stud
Stock5 328
100V
35A
1.4V @ 110A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 100V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 175°C
HSM170G/TR13
Microsemi Corporation

DIODE SCHOTTKY 1A 70V SMBG

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
paquet: -
Stock3 632
-
-
-
-
-
-
-
-
-
-
-
SGL41-30-E3/97
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 1A DO213AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: 110pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -55°C ~ 125°C
paquet: DO-213AB, MELF
Stock2 048
30V
1A
500mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
110pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF
DO-213AB
-55°C ~ 125°C
SSL23HR5G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 410mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 125°C
paquet: DO-214AA, SMB
Stock7 392
30V
2A
410mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 30V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 125°C
S3DHE3_A/H
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.5µs
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-214AB, SMC
Stock6 832
200V
3A
1.15V @ 2.5A
Standard Recovery >500ns, > 200mA (Io)
2.5µs
10µA @ 200V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
BYM12-150-E3/96
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 1A DO213AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 150V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C
paquet: DO-213AB, MELF (Glass)
Stock7 424
150V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 150V
20pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
ES1AL RUG
TSC America Inc.

DIODE, SUPER FAST, 1A, 50V, 35NS

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: DO-219AB
Stock5 760
50V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
10pF @ 1V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SE15FDHM3/H
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1.5A DO219AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 900ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 10.5pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: DO-219AB
Stock2 080
200V
1.5A
1.05V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
900ns
5µA @ 200V
10.5pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 175°C
VS-120NQ045PBF
Vishay Semiconductor Diodes Division

DIODE MODULE 45V 120A D-67

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 120A
  • Voltage - Forward (Vf) (Max) @ If: 630mV @ 120A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10mA @ 45V
  • Capacitance @ Vr, F: 5200pF @ 5V, 1MHz
  • Mounting Type: Chassis Mount
  • Package / Case: D-67 HALF-PAK
  • Supplier Device Package: D-67
  • Operating Temperature - Junction: -
paquet: D-67 HALF-PAK
Stock3 504
45V
120A
630mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
10mA @ 45V
5200pF @ 5V, 1MHz
Chassis Mount
D-67 HALF-PAK
D-67
-
hot LLSD101C-7
Diodes Incorporated

DIODE SCHOTTKY 40V 15MA MINIMELF

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 15mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 15mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 1ns
  • Current - Reverse Leakage @ Vr: 200nA @ 30V
  • Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AC, MINI-MELF, SOD-80
  • Supplier Device Package: Mini MELF
  • Operating Temperature - Junction: -55°C ~ 125°C
paquet: DO-213AC, MINI-MELF, SOD-80
Stock35 820
40V
15mA (DC)
900mV @ 15mA
Small Signal =< 200mA (Io), Any Speed
1ns
200nA @ 30V
2.2pF @ 0V, 1MHz
Surface Mount
DO-213AC, MINI-MELF, SOD-80
Mini MELF
-55°C ~ 125°C
STTH15S12W
STMicroelectronics

DIODE GEN PURP 1.2KV 15A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 3.1V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40ns
  • Current - Reverse Leakage @ Vr: 10µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 175°C (Max)
paquet: TO-220-2
Stock16 752
1200V
15A
3.1V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
10µA @ 1200V
-
Through Hole
TO-220-2
TO-220AC
175°C (Max)
MMBD4148TR
SMC Diode Solutions

DIODE GEN PURP 75V 150MA SOT23

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 2.5µA @ 75V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: TO-236-3, SC-59, SOT-23-3
Stock53 430
75V
150mA
1.25V @ 150mA
Small Signal =< 200mA (Io), Any Speed
4ns
2.5µA @ 75V
2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
-55°C ~ 150°C
hot DSEP60-06A
IXYS

DIODE GEN PURP 600V 60A TO247AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 2.04V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 650µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: TO-247-2
Stock5 488
600V
60A
2.04V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
650µA @ 600V
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 175°C
UF4006GP-BP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Request a Quote
800 V
1A
1.7 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
5 µA @ 800 V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-55°C ~ 150°C
1N5397-TP
Micro Commercial Co

DIODE GEN PURP 600V 1.5A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Request a Quote
600 V
1.5A
1.1 V @ 1.5 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 600 V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 150°C
VS-4EVH02-M3-I
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 4A SLIMDPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 3 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: SlimDPAK
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: -
Stock19 542
200 V
4A
1 V @ 4 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
3 µA @ 200 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
SlimDPAK
-55°C ~ 175°C
DSA15IM150UC-TRL
IXYS

DIODE SCHOTTKY 150V 15A TO252

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 890 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250 µA @ 150 V
  • Capacitance @ Vr, F: 82pF @ 24V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: -
Request a Quote
150 V
15A
890 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
250 µA @ 150 V
82pF @ 24V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
SIDC32D170HX1SA3
Infineon Technologies

DIODE GP 1.7KV 50A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1700 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Request a Quote
1700 V
50A
1.8 V @ 50 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 1700 V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
S3D15065I
SMC Diode Solutions

DIODE SCHOTTKY SILICON CARBIDE S

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 42A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 15 µA @ 650 V
  • Capacitance @ Vr, F: 1243pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Isolated Tab
  • Supplier Device Package: TO-220-Isolation
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: -
Stock2 970
650 V
42A
1.7 V @ 15 A
No Recovery Time > 500mA (Io)
0 ns
15 µA @ 650 V
1243pF @ 0V, 1MHz
Through Hole
TO-220-2 Isolated Tab
TO-220-Isolation
-55°C ~ 175°C
FR605T-G
Comchip Technology

DIODE GEN PURP 600V 6A R-6

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: R-6, Axial
  • Supplier Device Package: R-6
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Request a Quote
600 V
6A
1.3 V @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
250 ns
10 µA @ 600 V
100pF @ 4V, 1MHz
Through Hole
R-6, Axial
R-6
-55°C ~ 150°C
RS2JAH
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1.5A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
paquet: -
Stock45 000
600 V
1.5A
1.3 V @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
250 ns
5 µA @ 600 V
50pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SD125SB45A-T1
SMC Diode Solutions

DIODE SCHOTTKY 45V 15A DIE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400 µA @ 45 V
  • Capacitance @ Vr, F: 800pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: -
Request a Quote
45 V
15A
640 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
400 µA @ 45 V
800pF @ 5V, 1MHz
Surface Mount
Die
Die
-55°C ~ 175°C
SSL13
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 30V 1A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 390 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 125°C
paquet: -
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30 V
1A
390 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 30 V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 125°C
SK34SMA-AQ
Diotec Semiconductor

IC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA/DO-214AC
  • Operating Temperature - Junction: -50°C ~ 150°C
paquet: -
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40 V
3A
500 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 40 V
-
Surface Mount
DO-214AC, SMA
SMA/DO-214AC
-50°C ~ 150°C
FFSH50120A
onsemi

DIODE SIL CARB 1.2KV 77A TO247-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 77A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
  • Capacitance @ Vr, F: 2560pF @ 1V, 100kHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -55°C ~ 175°C
paquet: -
Stock3 564
1200 V
77A
-
No Recovery Time > 500mA (Io)
0 ns
200 µA @ 1200 V
2560pF @ 1V, 100kHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
BYWB29-200-M3-I
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 8A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -65°C ~ 150°C
paquet: -
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200 V
8A
1.3 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
10 µA @ 200 V
45pF @ 4V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-65°C ~ 150°C