Page 8 - produits présentés | Heisener Electronics

Référence	Fabricant	Description	paquet	Stock
2N7002-7-F	Diodes Incorporated	MOSFET N-CH 60V 115MA SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 370mW (Ta) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	paquet: TO-236-3, SC-59, SOT-23-3	Stock127 124 664
2N7002LT1G	ON Semiconductor	MOSFET N-CH 60V 0.115A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225mW (Ta) Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	paquet: TO-236-3, SC-59, SOT-23-3	Stock11 691 168
ARF444	Microsemi Corporation	PWR MOSFET RF N-CH 900V TO-247AD Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	paquet: -	Stock7 264
ARF445	Microsemi Corporation	PWR MOSFET RF N-CH 900V TO-247AD Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	paquet: -	Stock6 768
VMMK-1218-TR1G	Broadcom Limited	FET RF 5V 10GHZ 0402 Transistor Type: E-pHEMT Frequency: 10GHz Gain: 9dB Voltage - Test: 3V Current Rating: 100mA Noise Figure: 0.81dB Current - Test: 20mA Power - Output: 12dBm Voltage - Rated: 5V Package / Case: 0402 (1005 Metric) Supplier Device Package: 0402	paquet: 0402 (1005 Metric)	Stock5 280
2N5485	Fairchild/ON Semiconductor	JFET N-CH 25V 10MA TO92 Transistor Type: N-Channel JFET Frequency: 400MHz Gain: - Voltage - Test: 15V Current Rating: 10mA Noise Figure: 4dB Current - Test: - Power - Output: - Voltage - Rated: 25V Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	paquet: TO-226-3, TO-92-3 (TO-226AA)	Stock183 996
NE3509M04-A	CEL	FET RF 4V 2GHZ 4-SMINI Transistor Type: HFET Frequency: 2GHz Gain: 17.5dB Voltage - Test: 2V Current Rating: 60mA Noise Figure: 0.4dB Current - Test: 10mA Power - Output: 11dBm Voltage - Rated: 4V Package / Case: SOT-343F Supplier Device Package: M04	paquet: SOT-343F	Stock6 816
MPF102	Fairchild/ON Semiconductor	JFET N-CH 25V 20MA TO92 Transistor Type: N-Channel JFET Frequency: - Gain: - Voltage - Test: - Current Rating: 20mA Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: 25V Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	paquet: TO-226-3, TO-92-3 (TO-226AA)	Stock4 752
VRF150MP	Microsemi Corporation	RF MOSFET N-CHANNEL 50V M174 Transistor Type: N-Channel Frequency: 150MHz Gain: 11dB Voltage - Test: 50V Current Rating: 1mA Noise Figure: - Current - Test: 250mA Power - Output: 150W Voltage - Rated: 170V Package / Case: M174 Supplier Device Package: M174	paquet: M174	Stock3 280
MRF151G	M/A-Com Technology Solutions	FET RF 2CH 125V 175MHZ 375-04 Transistor Type: 2 N-Channel (Dual) Common Source Frequency: 175MHz Gain: 16dB Voltage - Test: 50V Current Rating: 40A Noise Figure: - Current - Test: 500mA Power - Output: 300W Voltage - Rated: 125V Package / Case: 375-04 Supplier Device Package: 375-04, Style 2	paquet: 375-04	Stock2 000
VRF150	Microsemi Corporation	MOSFET RF PWR N-CH 50V 150W M174 Transistor Type: N-Channel Frequency: 150MHz Gain: 11dB Voltage - Test: 50V Current Rating: 1mA Noise Figure: - Current - Test: 250mA Power - Output: 150W Voltage - Rated: 170V Package / Case: M174 Supplier Device Package: M174	paquet: M174	Stock5 520
NPT1012B	M/A-Com Technology Solutions	HEMT N-CH 28V 25W DC-4000MHZ Transistor Type: HEMT Frequency: 0Hz ~ 4GHz Gain: 13dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 225mA Power - Output: - Voltage - Rated: 100V Package / Case: - Supplier Device Package: -	paquet: -	Stock4 496
PD55015-E	STMicroelectronics	FET RF 40V 500MHZ PWRSO-10 Transistor Type: LDMOS Frequency: 500MHz Gain: 14dB Voltage - Test: 12.5V Current Rating: 5A Noise Figure: - Current - Test: 150mA Power - Output: 15W Voltage - Rated: 40V Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) Supplier Device Package: PowerSO-10RF (Formed Lead)	paquet: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)	Stock7 152
ATF-54143-TR1G	Broadcom Limited	FET RF 5V 2GHZ SOT-343 Transistor Type: pHEMT FET Frequency: 2GHz Gain: 16.6dB Voltage - Test: 3V Current Rating: 120mA Noise Figure: 0.5dB Current - Test: 60mA Power - Output: 20.4dBm Voltage - Rated: 5V Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	paquet: SC-82A, SOT-343	Stock1 561 968
BF862,215	NXP	JFET N-CH 20V 25MA SOT23 Transistor Type: N-Channel JFET Frequency: - Gain: - Voltage - Test: - Current Rating: 25mA Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: 20V Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	paquet: TO-236-3, SC-59, SOT-23-3	Stock13 188
IRFHM792TRPBF	Infineon Technologies	MOSFET 2N-CH 100V 2.3A 8PQFN FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 195 mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 4V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 251pF @ 25V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-PQFN (3.3x3.3), Power33	paquet: 8-PowerVDFN	Stock167 280
IRF7343TRPBF	Infineon Technologies	MOSFET N/P-CH 55V 8-SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	paquet: 8-SOIC (0.154", 3.90mm Width)	Stock1 019 832
NTJD4001NT1G	ON Semiconductor	MOSFET 2N-CH 30V 0.25A SOT-363 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 250mA Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V Power - Max: 272mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	paquet: 6-TSSOP, SC-88, SOT-363	Stock3 137 352
NTHD4102PT1G	ON Semiconductor	MOSFET 2P-CH 20V 2.9A CHIPFET FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?	paquet: 8-SMD, Flat Lead	Stock1 423 812
NTJD4152PT1G	ON Semiconductor	MOSFET 2P-CH 20V 0.88A SOT-363 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 880mA Rds On (Max) @ Id, Vgs: 260 mOhm @ 880mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V Power - Max: 272mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	paquet: 6-TSSOP, SC-88, SOT-363	Stock1 730 580
NTJD5121NT1G	ON Semiconductor	MOSFET 2N-CH 60V 0.295A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 295mA Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	paquet: 6-TSSOP, SC-88, SOT-363	Stock2 930 520
SI4214DDY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 8.5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	paquet: 8-SOIC (0.154", 3.90mm Width)	Stock632 880
BSC750N10ND G	Infineon Technologies	MOSFET 2N-CH 100V 3.2A 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.2A Rds On (Max) @ Id, Vgs: 75 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 4V @ 12µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 50V Power - Max: 26W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8	paquet: 8-PowerVDFN	Stock2 128
IRF8313TRPBF	Infineon Technologies	MOSFET 2N-CH 30V 9.7A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.7A Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 9.7A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	paquet: 8-SOIC (0.154", 3.90mm Width)	Stock484 608
US6K1TR	Rohm Semiconductor	MOSFET 2N-CH 30V 1.5A TUMT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.5A Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: TUMT6	paquet: 6-SMD, Flat Leads	Stock828 000
SI6968BEDQ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 5.2A 8-TSSOP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	paquet: 8-TSSOP (0.173", 4.40mm Width)	Stock156 012
DMN32D2LV-7	Diodes Incorporated	MOSFET 2N-CH 30V 0.4A SOT-563 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 400mA Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 100mA, 4V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 3V Power - Max: 400mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	paquet: SOT-563, SOT-666	Stock457 200
FDS6910	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 7.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A Rds On (Max) @ Id, Vgs: 13 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	paquet: 8-SOIC (0.154", 3.90mm Width)	Stock472 332
SI4946BEY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 60V 6.5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.5A Rds On (Max) @ Id, Vgs: 41 mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V Power - Max: 3.7W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	paquet: 8-SOIC (0.154", 3.90mm Width)	Stock582 864
FDS4935BZ	Fairchild/ON Semiconductor	MOSFET 2P-CH 30V 6.9A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	paquet: 8-SOIC (0.154", 3.90mm Width)	Stock59 400

2N7002-7-F

Diodes Incorporated

MOSFET N-CH 60V 115MA SOT23-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

paquet: TO-236-3, SC-59, SOT-23-3

Stock127 124 664

2N7002LT1G

ON Semiconductor

MOSFET N-CH 60V 0.115A SOT-23

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 115mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 225mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3

paquet: TO-236-3, SC-59, SOT-23-3

Stock11 691 168

ARF444

Microsemi Corporation

PWR MOSFET RF N-CH 900V TO-247AD

Transistor Type: -
Frequency: -
Gain: -
Voltage - Test: -
Current Rating: -
Noise Figure: -
Current - Test: -
Power - Output: -
Voltage - Rated: -
Package / Case: -
Supplier Device Package: -

paquet: -

Stock7 264

ARF445

Microsemi Corporation

PWR MOSFET RF N-CH 900V TO-247AD

Transistor Type: -
Frequency: -
Gain: -
Voltage - Test: -
Current Rating: -
Noise Figure: -
Current - Test: -
Power - Output: -
Voltage - Rated: -
Package / Case: -
Supplier Device Package: -

paquet: -

Stock6 768

VMMK-1218-TR1G

Broadcom Limited

FET RF 5V 10GHZ 0402

Transistor Type: E-pHEMT
Frequency: 10GHz
Gain: 9dB
Voltage - Test: 3V
Current Rating: 100mA
Noise Figure: 0.81dB
Current - Test: 20mA
Power - Output: 12dBm
Voltage - Rated: 5V
Package / Case: 0402 (1005 Metric)
Supplier Device Package: 0402

paquet: 0402 (1005 Metric)

Stock5 280

2N5485

Fairchild/ON Semiconductor

JFET N-CH 25V 10MA TO92

Transistor Type: N-Channel JFET
Frequency: 400MHz
Gain: -
Voltage - Test: 15V
Current Rating: 10mA
Noise Figure: 4dB
Current - Test: -
Power - Output: -
Voltage - Rated: 25V
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

paquet: TO-226-3, TO-92-3 (TO-226AA)

Stock183 996

NE3509M04-A

CEL

FET RF 4V 2GHZ 4-SMINI

Transistor Type: HFET
Frequency: 2GHz
Gain: 17.5dB
Voltage - Test: 2V
Current Rating: 60mA
Noise Figure: 0.4dB
Current - Test: 10mA
Power - Output: 11dBm
Voltage - Rated: 4V
Package / Case: SOT-343F
Supplier Device Package: M04

paquet: SOT-343F

Stock6 816

MPF102

Fairchild/ON Semiconductor

JFET N-CH 25V 20MA TO92

Transistor Type: N-Channel JFET
Frequency: -
Gain: -
Voltage - Test: -
Current Rating: 20mA
Noise Figure: -
Current - Test: -
Power - Output: -
Voltage - Rated: 25V
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

paquet: TO-226-3, TO-92-3 (TO-226AA)

Stock4 752

VRF150MP

Microsemi Corporation

RF MOSFET N-CHANNEL 50V M174

Transistor Type: N-Channel
Frequency: 150MHz
Gain: 11dB
Voltage - Test: 50V
Current Rating: 1mA
Noise Figure: -
Current - Test: 250mA
Power - Output: 150W
Voltage - Rated: 170V
Package / Case: M174
Supplier Device Package: M174

paquet: M174

Stock3 280

MRF151G

M/A-Com Technology Solutions

FET RF 2CH 125V 175MHZ 375-04

Transistor Type: 2 N-Channel (Dual) Common Source
Frequency: 175MHz
Gain: 16dB
Voltage - Test: 50V
Current Rating: 40A
Noise Figure: -
Current - Test: 500mA
Power - Output: 300W
Voltage - Rated: 125V
Package / Case: 375-04
Supplier Device Package: 375-04, Style 2

paquet: 375-04

Stock2 000

VRF150

Microsemi Corporation

MOSFET RF PWR N-CH 50V 150W M174

Transistor Type: N-Channel
Frequency: 150MHz
Gain: 11dB
Voltage - Test: 50V
Current Rating: 1mA
Noise Figure: -
Current - Test: 250mA
Power - Output: 150W
Voltage - Rated: 170V
Package / Case: M174
Supplier Device Package: M174

paquet: M174

Stock5 520

NPT1012B

M/A-Com Technology Solutions

HEMT N-CH 28V 25W DC-4000MHZ

Transistor Type: HEMT
Frequency: 0Hz ~ 4GHz
Gain: 13dB
Voltage - Test: 28V
Current Rating: -
Noise Figure: -
Current - Test: 225mA
Power - Output: -
Voltage - Rated: 100V
Package / Case: -
Supplier Device Package: -

paquet: -

Stock4 496

PD55015-E

STMicroelectronics

FET RF 40V 500MHZ PWRSO-10

Transistor Type: LDMOS
Frequency: 500MHz
Gain: 14dB
Voltage - Test: 12.5V
Current Rating: 5A
Noise Figure: -
Current - Test: 150mA
Power - Output: 15W
Voltage - Rated: 40V
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Supplier Device Package: PowerSO-10RF (Formed Lead)

paquet: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Stock7 152

ATF-54143-TR1G

Broadcom Limited

FET RF 5V 2GHZ SOT-343

Transistor Type: pHEMT FET
Frequency: 2GHz
Gain: 16.6dB
Voltage - Test: 3V
Current Rating: 120mA
Noise Figure: 0.5dB
Current - Test: 60mA
Power - Output: 20.4dBm
Voltage - Rated: 5V
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

paquet: SC-82A, SOT-343

Stock1 561 968

BF862,215

NXP

JFET N-CH 20V 25MA SOT23

Transistor Type: N-Channel JFET
Frequency: -
Gain: -
Voltage - Test: -
Current Rating: 25mA
Noise Figure: -
Current - Test: -
Power - Output: -
Voltage - Rated: 20V
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

paquet: TO-236-3, SC-59, SOT-23-3

Stock13 188

IRFHM792TRPBF

Infineon Technologies

MOSFET 2N-CH 100V 2.3A 8PQFN

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 195 mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 251pF @ 25V
Power - Max: 2.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-PQFN (3.3x3.3), Power33

paquet: 8-PowerVDFN

Stock167 280

IRF7343TRPBF

Infineon Technologies

MOSFET N/P-CH 55V 8-SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

paquet: 8-SOIC (0.154", 3.90mm Width)

Stock1 019 832

NTJD4001NT1G

ON Semiconductor

MOSFET 2N-CH 30V 0.25A SOT-363

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 250mA
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
Power - Max: 272mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

paquet: 6-TSSOP, SC-88, SOT-363

Stock3 137 352

NTHD4102PT1G

ON Semiconductor

MOSFET 2P-CH 20V 2.9A CHIPFET

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: ChipFET?

paquet: 8-SMD, Flat Lead

Stock1 423 812

NTJD4152PT1G

ON Semiconductor

MOSFET 2P-CH 20V 0.88A SOT-363

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 880mA
Rds On (Max) @ Id, Vgs: 260 mOhm @ 880mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V
Power - Max: 272mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

paquet: 6-TSSOP, SC-88, SOT-363

Stock1 730 580

NTJD5121NT1G

ON Semiconductor

MOSFET 2N-CH 60V 0.295A SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 295mA
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

paquet: 6-TSSOP, SC-88, SOT-363

Stock2 930 520

SI4214DDY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 8.5A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

paquet: 8-SOIC (0.154", 3.90mm Width)

Stock632 880

BSC750N10ND G

Infineon Technologies

MOSFET 2N-CH 100V 3.2A 8TDSON

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Rds On (Max) @ Id, Vgs: 75 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 4V @ 12µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 50V
Power - Max: 26W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8

paquet: 8-PowerVDFN

Stock2 128

IRF8313TRPBF

Infineon Technologies

MOSFET 2N-CH 30V 9.7A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.7A
Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

paquet: 8-SOIC (0.154", 3.90mm Width)

Stock484 608

US6K1TR

Rohm Semiconductor

MOSFET 2N-CH 30V 1.5A TUMT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: TUMT6

paquet: 6-SMD, Flat Leads

Stock828 000

SI6968BEDQ-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 5.2A 8-TSSOP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

paquet: 8-TSSOP (0.173", 4.40mm Width)

Stock156 012

DMN32D2LV-7

Diodes Incorporated

MOSFET 2N-CH 30V 0.4A SOT-563

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 3V
Power - Max: 400mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

paquet: SOT-563, SOT-666

Stock457 200

FDS6910

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 7.5A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Rds On (Max) @ Id, Vgs: 13 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

paquet: 8-SOIC (0.154", 3.90mm Width)

Stock472 332

SI4946BEY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 60V 6.5A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Rds On (Max) @ Id, Vgs: 41 mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V
Power - Max: 3.7W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

paquet: 8-SOIC (0.154", 3.90mm Width)

Stock582 864

FDS4935BZ

Fairchild/ON Semiconductor

MOSFET 2P-CH 30V 6.9A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

paquet: 8-SOIC (0.154", 3.90mm Width)

Stock59 400